GaN on SiC epi susceptor

As a professional semiconductor manufacturer in China, VeTek Semiconductor GaN on SiC epi susceptor is a key component in the preparation process of GaN on SiC devices, and its performance directly affects the quality of the epitaxial layer. With the widespread application of GaN on SiC devices in power electronics, RF devices and other fields, the requirements for SiC epi susceptor will become higher and higher. VeTek Semiconductor focuses on providing the ultimate technology and product solutions for the semiconductor industry, and welcomes your consultation.

Generally, the role of GaN on SiC epi susceptor in semiconductor processing is as follows:

High temperature processing capability: GaN on SiC epi susceptor (GaN based on silicon carbide epitaxial growth disk) is mainly used in the gallium nitride (GaN) epitaxial growth process, especially in high temperature environments. This epitaxial growth disk can withstand extremely high processing temperatures, usually between 1000°C and 1500°C, making it suitable for the epitaxial growth of GaN materials and the processing of silicon carbide (SiC) substrates.

Excellent thermal conductivity: SiC epi susceptor needs to have good thermal conductivity to evenly transfer the heat generated by the heating source to the SiC substrate to ensure temperature uniformity during the growth process. Silicon carbide has extremely high thermal conductivity (about 120-150 W/mK), and GaN on SiC epi susceptor can conduct heat more effectively than traditional materials such as silicon. This feature is crucial in the gallium nitride epitaxial growth process because it helps maintain the temperature uniformity of the substrate, thereby improving the quality and consistency of the film.

Prevent pollution: The materials and surface treatment process of GaN on SiC epi susceptor must be able to prevent pollution of the growth environment and avoid the introduction of impurities into the epitaxial layer.

As a professional manufacturer of GaN on SiC epi susceptor, Porous Graphite and TaC Coating Plate in China, VeTek Semiconductor always insists on providing customized product services, and is committed to providing the industry with top technology and product solutions. We sincerely look forward to your consultation and cooperation.

Basic physical properties of CVD SiC coating:

GaN on SiC epi susceptor production shops:

Overview of the semiconductor chip epitaxy industry chain：