GaN on SiC epi susceptor

VeTek Semiconductor is a professional manufacturer of GaN on SiC epi susceptor, CVD SiC coating, and CVD TAC COATING graphite susceptor in China. Among them, GaN on SiC epi susceptor plays a vital role in semiconductor processing. Through its excellent thermal conductivity, high temperature processing ability and chemical stability, it ensures the high efficiency and material quality of the GaN epitaxial growth process. We sincerely look forward to your further consultation.

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Product Description

As a professional semiconductor manufacturer in China, VeTek Semiconductor GaN on SiC epi susceptor is a key component in the preparation process of GaN on SiC devices, and its performance directly affects the quality of the epitaxial layer. With the widespread application of GaN on SiC devices in power electronics, RF devices and other fields, the requirements for SiC epi susceptor will become higher and higher. VeTek Semiconductor focuses on providing the ultimate technology and product solutions for the semiconductor industry, and welcomes your consultation.

Generally, the roles of GaN on SiC epi susceptor in semiconductor processing are as following:

Illustration of epitaxial structures of GaN on SiC

● High temperature processing capability: GaN on SiC epi susceptor (GaN based on silicon carbide epitaxial growth disk) is mainly used in the gallium nitride (GaN) epitaxial growth process, especially in high temperature environments. This epitaxial growth disk can withstand extremely high processing temperatures, usually between 1000°C and 1500°C, making it suitable for the epitaxial growth of GaN materials and the processing of silicon carbide (SiC) substrates.

● Excellent thermal conductivity: SiC epi susceptor needs to have good thermal conductivity to evenly transfer the heat generated by the heating source to the SiC substrate to ensure temperature uniformity during the growth process. Silicon carbide has extremely high thermal conductivity (about 120-150 W/mK), and GaN on SiC Epitaxy susceptor can conduct heat more effectively than traditional materials such as silicon. This feature is crucial in the gallium nitride epitaxial growth process because it helps maintain the temperature uniformity of the substrate, thereby improving the quality and consistency of the film.

● Prevent pollution: The materials and surface treatment process of GaN on SiC Epi susceptor must be able to prevent pollution of the growth environment and avoid the introduction of impurities into the epitaxial layer.

As a professional manufacturer of GaN on SiC epi susceptor, Porous Graphite and TaC Coating Plate in China, VeTek Semiconductor always insists on providing customized product services, and is committed to providing the industry with top technology and product solutions. We sincerely look forward to your consultation and cooperation.

CVD SIC COATING FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC Coating

Basic physical properties of CVD SiC coating
Coating Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
CVD SiC coating Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1