VeTek Semiconductor is a leading manufacturer, innovator and leader of CVD SiC Coating and TAC Coating in China. For many years, we have been focusing on various CVD SiC Coating products such as CVD SiC coated Skirt, CVD SiC Coating Ring, CVD SiC Coating carrier, etc. VeTek Semiconductor supports customized product services and satisfactory product prices, and looks forward to your further consultation.
Vetek Semiconductor is a professional manufacturer for CVD SiC coated skirt in China.
Aixtron equipment's deep ultraviolet epitaxy technology plays a crucial role in semiconductor manufacturing. This technology uses a deep ultraviolet light source to deposit various materials on the surface of the wafer through epitaxial growth to achieve precise control of wafer performance and function. Deep ultraviolet epitaxy technology is used in a wide range of applications, covering the production of various electronic devices from leds to semiconductor lasers.
In this process, the CVD SiC coated skirt plays a key role. It is designed to support the epitaxial sheet and drive the epitaxial sheet to rotate to ensure uniformity and stability during epitaxial growth. By precisely controlling the rotation speed and direction of the graphite susceptor, the growth process of the epitaxial carrier can be accurately controlled.
The product is made of high quality graphite and silicon carbide coating, ensuring its excellent performance and long service life. The imported graphite material ensures the stability and reliability of the product, so that it can perform well in a variety of working environments. In terms of coating, a silicon carbide material of less than 5ppm is used to ensure the uniformity and stability of the coating. At the same time, the new process and the thermal expansion coefficient of graphite material form a good match, improve the product's high temperature resistance and thermal shock resistance, so that it can still maintain stable performance in high temperature environment.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |