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  • SiC Coated Epitaxy Susceptor

    • China SiC Coated Epitaxy Susceptor Manufacturer, Supplier, Factory

    As a professional SiC Coated Epitaxy Susceptor manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC Coated Epitaxy Susceptor made in China, you can leave us a message.

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    • TaC Coating Tube

      TaC Coating Tube

      As a professional TaC Coating Tube manufacturer and supplier in China, VeTek Semiconductor's TaC coating tube is a key component for the successful growth of silicon carbide single crystals. With its high temperature resistance, chemical inertness and excellent performance, it ensures the production of high-quality crystals with consistent results. Trust our innovative solutions to enhance your PVT method SiC crystal growth process and achieve excellent results.Welcome to inquiry us.
    • Graphite Rotating Susceptor

      Graphite Rotating Susceptor

      High purity graphite rotating susceptor plays an important role in the epitaxial growth of gallium nitride (MOCVD process). VeTek Semiconductor is a leading graphite rotating susceptor manufacturer and supplier in China. We have developed many high-purity graphite products based on high-purity graphite materials, which fully meet the requirements of the semiconductor industry. VeTek Semiconductor looks forward to becoming your partner in Rotating Graphite susceptor.
    • CVD SiC coating barrel susceptor

      CVD SiC coating barrel susceptor

      VeTek Semiconductor CVD SiC coating barrel susceptor is the core component of the barrel type epitaxial furnace.With the help of CVD SiC coating barrel susceptor, the quantity and quality of epitaxial growth are greatly improved.VeTek Semiconductor is a professional manufacturer and supplier of SiC Coated Barrel Susceptor, and is at the leading level in China and even in the world.VeTek Semiconductor looks forward to establishing a close cooperative relationship with you in the semiconductor industry.
    • TaC Coating Heater

      TaC Coating Heater

      VeTek Semiconductor is a leading manufacturer and innovator of TaC Coating Heater in China. This product has an extremely high melting point (about 3880°C). The high melting point of TaC Coating Heater enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry. We look forward to becoming your long-term partner in China.
    • SiC Coated Pedestal

      SiC Coated Pedestal

      Vetek Semiconductor is professional in fabricating CVD SiC coating, TaC coating on graphite and silicon carbide material. We provide OEM and ODM products like SiC Coated Pedestal,wafer carrier, wafer chuck, wafer carrier tray, planetary disk and so on.With 1000 grade clean room and purification device,we can provide you products with impurity below 5ppm.Looking forward to hearing from you soon.
    • Three-petal Graphite Crucible

      Three-petal Graphite Crucible

      VeTek Semiconductor's Three-petal Graphite Crucible is a special container designed for the thermal treatment of semiconductor materials, especially for the production of single crystals. It plays a vital role in controlling the growth of single crystal structures required for the manufacture of semiconductor devices. VeTek Semiconductor's looks forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • 8-inch SiC epitaxial furnace and homoepitaxial process research

      8-inch SiC epitaxial furnace and homoepitaxial process research

    • What is CVD TAC Coating?

      CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

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