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    • China semiconductor quartz Manufacturer, Supplier, Factory

    As a professional semiconductor quartz manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable semiconductor quartz made in China, you can leave us a message.

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    • CVD SiC Coating Nozzle

      CVD SiC Coating Nozzle

      Vetek Semiconductor’s CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications.Looking forward to setting up long term cooperation with you.
    • TaC Coated Graphite Wafer Carrier

      TaC Coated Graphite Wafer Carrier

      VeTek Semiconductor is a leading TaC Coated Graphite Wafer Carrier manufacturer and innovator in China.We have been specialized in SiC and TaC coating for many years.Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coated Tube for Crystal Growth

      Tantalum Carbide Coated Tube for Crystal Growth

      VeTek Semiconductor is a leading Tantalum Carbide Coated Tube for Crystal Growth manufacturer and innovator in China.We have been specialized in ceramic coating for many years.Our products have a high purity and high temperature resistance.We look forward to becoming your long-term partner in China.
    • TaC Coated Deflector Ring

      TaC Coated Deflector Ring

      VeTek Semiconductor's TaC Coated Deflector Ring is a highly specialized component designed for SiC crystal growth processes. The TaC coating provides excellent high temperature resistance and chemical inertness to cope with the high temperatures and corrosive environments during crystal growth process. This ensures stable performance and long life of the component, reducing the frequency of replacement and downtime. We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
    • Rapid Thermal Annealing Susceptor

      Rapid Thermal Annealing Susceptor

      VeTek Semiconductor is a leading Rapid Thermal Annealing Susceptor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer Rapid Thermal Annealing Susceptor with high quality,high temperature resistance,super thin.We welcome you to visit our factory in China.
    • CVD SiC Coated Wafer Barrel Holder

      CVD SiC Coated Wafer Barrel Holder

      CVD SiC coated wafer Barrel holder is the key component of epitaxial growth furnace, widely used in MOCVD epitaxial growth furnaces. VeTek Semiconductor provides you with highly customized products. No matter what your needs are for CVD SiC coated wafer Barrel holder, Welcome to consult us.
    • Related Blog
    • Reviews

    • Silicon carbide nanomaterials

      Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

    • GaN-based low-temperature epitaxy technology

      This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

    • What is CVD TAC Coating?

      CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

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