Porous Tantalum Carbide

VeTek semiconductor Porous Tantalum Carbide (TaC) is a high-performance ceramic material that combines the properties of tantalum and carbon. Its porous structure is very suitable for specific applications in high temperature and extreme environments. TaC combines excellent hardness, thermal stability and chemical resistance, making it an ideal material choice in semiconductor processing.

Porous Tantalum Carbide (TaC) is composed of tantalum (Ta) and carbon (C), in which tantalum forms a strong chemical bond with carbon atoms, giving the material extremely high durability and wear resistance. The porous structure of Porous TaC is created during the manufacturing process of the material, and the porosity can be controlled according to specific application needs. This product is usually manufactured by chemical vapor deposition (CVD) method, ensuring precise control of its pore size and distribution.

Molecular structure of Tantalum Carbide

VeTek semiconductor Porous Tantalum Carbide (TaC) has the following product features:

- Porosity: The porous structure gives it different functions in specific application scenarios, including gas diffusion, filtration or controlled heat dissipation.

- High melting point: Tantalum carbide has an extremely high melting point of about 3,880°C, which is suitable for extremely high temperature environments.

- Excellent hardness: Porous TaC has an extremely high hardness of about 9-10 in the Mohs hardness scale, similar to diamond. , and can resist mechanical wear under extreme conditions.

- Thermal stability: Tantalum Carbide (TaC) material can remain stable in high temperature environments and has strong thermal stability, ensuring its consistent performance in high temperature environments.

- High thermal conductivity: Despite its porosity, Porous Tantalum Carbide still retains good thermal conductivity, ensuring efficient heat transfer.

- Low thermal expansion coefficient: The low thermal expansion coefficient of Tantalum Carbide (TaC) helps the material remain dimensionally stable under significant temperature fluctuations and reduces the impact of thermal stress.

Physical properties of TaC coating：

In semiconductor manufacturing, Porous Tantalum Carbide (TaC) plays the following specific key roles:

In high-temperature processes such as plasma etching and CVD, VeTek semiconductor Porous Tantalum Carbide is often used as a protective coating for processing equipment. This is due to the strong corrosion resistance of TaC Coating and its high-temperature stability. These properties ensure that it effectively protects surfaces exposed to reactive gases or extreme temperatures, thereby ensuring the normal reaction of high-temperature processes.

In diffusion processes, Porous Tantalum Carbide can serve as an effective diffusion barrier to prevent the mixing of materials in high-temperature processes. This feature is often used to control the diffusion of dopants in processes such as ion implantation and the purity control of semiconductor wafers.

The porous structure of VeTek semiconductor Porous Tantalum Carbide is very suitable for semiconductor processing environments that require precise gas flow control or filtration. In this process, Porous TaC mainly plays the role of gas filtration and distribution. Its chemical inertness ensures that no contaminants are introduced during the filtration process. This effectively guarantees the purity of the processed product.

Tantalum carbide (TaC) coating on a microscopic cross-section: