LPE SI EPI Susceptor Set

VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4'' wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.

Send Inquiry

Product Description

VeTek Semiconductor is a professional China LPE Si EPI Susceptor Set manufacturer and supplier.

With good quality and competitive price,welcome to visit our factory and set up long-term cooperation with us.

The VeTeK Semiconductor LPE Si Epi Susceptor Set is a high-performance product created by applying a fine layer of silicon carbide onto the surface of highly purified isotropic graphite. This is achieved through VeTeK Semiconductor's proprietary Chemical Vapor Deposition (CVD) process.

VeTek Semiconductor's LPE Si Epi Susceptor Set is a CVD epitaxial deposition barrel reactor designed to perform reliably even in challenging conditions. Its outstanding coating adhesion, resistance to high-temperature oxidation, and corrosion make it an ideal choice for harsh environments. Moreover, its uniform thermal profile and laminar gas flow pattern prevent contamination, ensuring the growth of high-quality epitaxial layers.

The barrel-shaped design of our semiconductor epitaxial reactor optimizes the flow of gas, ensuring that heat is evenly distributed. This feature effectively prevents contamination and the diffusion of impurities, guaranteeing the production of high-quality epitaxial layers on wafer substrates.

At VeTek Semiconductor, we are committed to providing customers with high-quality and cost-effective products. Our LPE Si Epi Susceptor Set offers competitive pricing while maintaining excellent density for both the graphite substrate and silicon carbide coating. This combination ensures reliable protection in high-temperature and corrosive working environments.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1