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    • China round vacuum chuck Manufacturer, Supplier, Factory

    As a professional round vacuum chuck manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable round vacuum chuck made in China, you can leave us a message.

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    • CVD SiC Graphite Cylinder

      CVD SiC Graphite Cylinder

      Vetek Semiconductor’s CVD SiC Graphite Cylinder is pivotal in semiconductor equipment, serving as a protective shield within reactors to safeguard internal components in high temperature and pressure settings. It effectively shields against chemicals and extreme heat, preserving equipment integrity. With exceptional wear and corrosion resistance, it ensures longevity and stability in challenging environments. Utilizing these covers enhances semiconductor device performance, prolongs lifespan, and mitigates maintenance requirements and damage risks.Welcome to inquiry us.
    • silicon carbide ceramic coating graphite heater

      silicon carbide ceramic coating graphite heater

      As a professional silicon carbide ceramic coating graphite heater manufacturer and supplier in China, Silicon Carbide Ceramic Coating Graphite Heater is a high-performance heater made of graphite substrate and coated with silicon carbon ceramic (SiC) coating on its surface. With its composite material design, this product provides excellent heating solutions in semiconductor manufacturing. Welcome your inquiry.
    • Disc Susceptor

      Disc Susceptor

      Vetek Semiconductor provide edge-cutting Graphite Disc Susceptor. The SiC coating provides superior thermal stability, excellent chemical resistance, and enhanced process uniformity, ensuring optimal performance and reliability. Experience the next level of efficiency and precision with Vetek Semiconductor's SiC-coated Disc Susceptor.
    • Hot Zone graphite heater

      Hot Zone graphite heater

      VeTek Semiconductor Hot Zone graphite heater is designed to handle the extreme conditions in high temperature furnaces and maintain excellent performance and stability in complex processes such as chemical vapor deposition (CVD), epitaxial growth and high temperature annealing. VeTekSemi always focuses on producing and providing high-quality Hot Zone graphite heaters to ensure the best cost-effectiveness for customers. We sincerely invite you to contact us.
    • Porous SiC Ceramic Chuck

      Porous SiC Ceramic Chuck

      Vetek Semiconductor offers Porous SiC Ceramic Chuck widely used in wafer processing technology, transfer and other links, suitable for bonding, scribing, patch, polishing and other links, laser processing. Our Porous SiC Ceramic Chuck has Ultra-strong vacuum adsorption, high flatness and high purity meet the needs of most semiconductor industries.Welcome to inquiry us.
    • Silicon-based GaN Epitaxial Susceptor

      Silicon-based GaN Epitaxial Susceptor

      VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Silicon-based GaN Epitaxial Susceptor. The susceptor semiconductor is used in VEECO K465i GaN MOCVD system, high purity, high temperature resistance, corrosion resistance, welcome to inquire and cooperate with us!
    • Related Blog
    • Reviews

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • The Development History of 3C SiC

      Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • How much do you know about sapphire?

      This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

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