Do you know about MOCVD Susceptor?

In the metal-organic chemical vapor deposition (MOCVD) process, the suceptor is a key component responsible for supporting the wafer and ensuring the uniformity and precise control of the deposition process. Its material selection and product characteristics directly affect the stability of the epitaxial process and the quality of the product.

MOCVD Susceptor (Metal-Organic Chemical Vapor Deposition) is a key process component in semiconductor manufacturing. It is mainly used in the MOCVD (Metal-Organic Chemical Vapor Deposition) process to support and heat the wafer for thin film deposition. The design and material selection of the suceptor are crucial to the uniformity, efficiency and quality of the final product.

Product Type and Material Selection:

The design and material selection of MOCVD Susceptor are diverse, usually determined by process requirements and reaction conditions. The following are common product types and their materials:

SiC Coated Susceptor (Silicon Carbide Coated Susceptor):

Description: Susceptor with SiC coating, with graphite or other high-temperature materials as the substrate, and CVD SiC coating (CVD SiC Coating) on the surface to improve its wear resistance and corrosion resistance.

Application: Widely used in MOCVD processes in high temperature and highly corrosive gas environments, especially in silicon epitaxy and compound semiconductor deposition.

TaC Coated Susceptor:

Description: Susceptor with TaC coating (CVD TaC Coating) as the main material has extremely high hardness and chemical stability and is suitable for use in extremely corrosive environments.

Application: Used in MOCVD processes that require higher corrosion resistance and mechanical strength, such as the deposition of gallium nitride (GaN) and gallium arsenide (GaAs).

Silicon Carbide Coated Graphite Susceptor for MOCVD:

Description: The substrate is graphite, and the surface is covered with a layer of CVD SiC coating to ensure stability and long life at high temperatures.

Application: Suitable for use in equipment such as Aixtron MOCVD reactors to manufacture high-quality compound semiconductor materials.

EPI Susceptor (Epitaxy Susceptor):

Description: Susceptor specially designed for epitaxial growth process, usually with SiC Coating or TaC Coating to enhance its thermal conductivity and durability.

Application: In silicon epitaxy and compound semiconductor epitaxy, it is used to ensure uniform heating and deposition of wafers.

Main role of Susceptor for MOCVD in semiconductor processing:

Wafer support and uniform heating:

Function: Susceptor is used to support wafers in MOCVD reactors and provide uniform heat distribution through induction heating or other methods to ensure uniform film deposition.

Heat conduction and stability:

Function: The thermal conductivity and thermal stability of Susceptor materials are crucial. SiC Coated Susceptor and TaC Coated Susceptor can maintain stability in high-temperature processes due to their high thermal conductivity and high temperature resistance, avoiding film defects caused by uneven temperature.

Corrosion resistance and long life:

Function: In the MOCVD process, the Susceptor is exposed to various chemical precursor gases. SiC Coating and TaC Coating provide excellent corrosion resistance, reduce the interaction between the material surface and the reaction gas, and extend the service life of the Susceptor.

Optimization of reaction environment:

Function: By using high-quality Susceptors, the gas flow and temperature field in the MOCVD reactor are optimized, ensuring a uniform film deposition process and improving the yield and performance of the device. It is usually used in Susceptors for MOCVD Reactors and Aixtron MOCVD equipment.

Product Features and Technical Advantages：

High thermal conductivity and thermal stability:

Features: SiC and TaC coated Susceptors have extremely high thermal conductivity, can quickly and evenly distribute heat, and maintain structural stability at high temperatures to ensure uniform heating of wafers.

Advantages: Suitable for MOCVD processes that require precise temperature control, such as epitaxial growth of compound semiconductors such as gallium nitride (GaN) and gallium arsenide (GaAs).

Excellent corrosion resistance:

Features: CVD SiC Coating and CVD TaC Coating have extremely high chemical inertness and can resist corrosion from highly corrosive gases such as chlorides and fluorides, protecting the substrate of the Susceptor from damage.

Advantages: Extend the service life of the Susceptor, reduce maintenance frequency, and improve the overall efficiency of the MOCVD process.

High mechanical strength and hardness:

Features: The high hardness and mechanical strength of SiC and TaC coatings enable the Susceptor to withstand mechanical stress in high temperature and high pressure environments and maintain long-term stability and precision.

Advantages: Particularly suitable for semiconductor manufacturing processes that require high precision, such as epitaxial growth and chemical vapor deposition.

Market Application and Development Prospects

MOCVD Susceptors are widely used in the manufacture of high-brightness LEDs, power electronic devices (such as GaN-based HEMTs), solar cells, and other optoelectronic devices. With the increasing demand for higher performance and lower power consumption semiconductor devices, MOCVD technology continues to advance, driving innovation in Susceptor materials and designs. For example, developing SiC coating technology with higher purity and lower defect density, and optimizing the structural design of Susceptor to adapt to larger wafers and more complex multi-layer epitaxial processes.

VeTek semiconductor Technology Co., LTD is a leading provider of advanced coating materials for the semiconductor industry. our company focus on developing cutting-edge solutions for the industry.

Our main product offerings include CVD silicon carbide (SiC) coatings, tantalum carbide (TaC) coatings, bulk SiC, SiC powders, and high-purity SiC materials, SiC coated graphite susceptor, preheat rings, TaC coated diversion ring, halfmoon parts, etc., the purity is below 5ppm, can meet customer requirements.

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