SiC ICP Etching Plate

VeTek Semiconductor provides high-performance SiC ICP Etching Plates, designed for ICP etching applications in the semiconductor industry. Its unique material properties enable it to perform well in high temperature, high pressure and chemical corrosion environments, ensuring excellent performance and long-term stability in various etching processes. As a leading SiC ICP Etching Plate manufacturer and supplier in China, VeTek Semiconductor looks forward to becoming your long-term partner.

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Product Description

ICP etching (Inductively Coupled Plasma Etching) technology is a precision etching process in semiconductor manufacturing, commonly used for high-precision and high-quality pattern transfer, especially suitable for deep hole etching, micro-pattern processing, etc. VeTek Semiconductor's SiC ICP Etching Plate is specially designed for ICP process, using high-quality SiC materials, and can provide excellent performance in high temperature, strong corrosive and high energy environments. SiC ICP Etching Plate has excellent thermal stability, corrosion resistance and high strength, and is an ideal etching platform in the field of semiconductor manufacturing and microelectronics processing. As a key component for bearing and supporting, it ensures stability and efficiency during the etching process.

SiC ICP Etching Plate Product Features

● High temperature tolerance

SiC ICP Etching Plate can withstand temperature changes up to 1600°C, ensuring stable use in high temperature ICP etching environment and avoiding deformation or performance degradation caused by temperature fluctuations.

● Excellent corrosion resistance

Silicon carbide material can effectively resist highly corrosive chemicals such as hydrogen fluoride, hydrogen chloride, sulfuric acid, etc. that may be exposed during etching, ensuring that the product is not damaged during long-term use.

● Low thermal expansion coefficient

SiC ICP Etching Plate has a low thermal expansion coefficient, which can maintain good dimensional stability in high temperature environment, reduce stress and deformation caused by temperature changes, and ensure accurate etching process.

● High hardness and wear resistance

SiC has a hardness of up to 9 Mohs hardness, which can effectively prevent mechanical wear that may occur during the etching process, extend service life, and reduce replacement frequency.

● Excellent thermal conductivity

Excellent thermal conductivity ensures that the SiC tray can quickly dissipate heat during the etching process, avoiding local temperature increases caused by heat accumulation, thereby ensuring the stability and uniformity of the etching process.

With the support of a strong technical team, VeTek Semiconductor SiC ICP Etching Plate has completed various difficult projects and provides customized products according to your needs. We are looking forward to your inquiry.

Basic physical properties of CVD SiC:

Basic physical properties of CVD SiC
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
CVD SiC Density	3.21 g/cm³
CVD SiC Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1