VeTek Semiconductor's TaC Coating Pedestal Support Plate is a high-precision product designed to meet the specific requirements of semiconductor epitaxy processes. With its TaC coating, high-temperature resistance, and chemical inertness, our product empowers you to produce high-quality EPI layers with high quality. We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
VeTek Semiconductor is China manufacturer & supplier who mainly produces CVD TaC coating susceptors, Inlet ring, Wafer Chunck, TaC coated holder, TaC Coating Pedestal Support Plate with many years of experience. Hope to build business relationship with you.
TaC ceramics have a melting point of up to 3880℃, high hardness (Mohs hardness 9 ~ 10), large thermal conductivity (22W·m-1·K−1), large bending strength (340 ~ 400MPa), and small thermal expansion coefficient (6.6×10−6K−1), and show excellent thermochemical stability and excellent physical properties. It has good chemical and mechanical compatibility with graphite and C/C composite materials, so TaC coating is widely used in aerospace thermal protection, single crystal growth and epitaxial reactors like Aixtron, LPE EPI reactor in semiconductor industry.
TaC coated graphite has better chemical corrosion resistance than bare stone ink or SiC coated graphite, can be used stably at 2200° high temperature, does not react with many metal elements, is the third generation of semiconductor single crystal growth, epitaxy and wafer etching scene of the best performance coating, can significantly improve the process of temperature and impurity control, Preparation of high quality silicon carbide wafers and related epitaxial wafers. It is especially suitable for growing GaN or AlN single crystal in MOCVD equipment and SiC single crystal in PVT equipment, and the quality of the single crystal grown is obviously improved.
Physical properties of TaC coating | |
TaC coating Density | 14.3 (g/cm³) |
Specific emissivity | 0.3 |
Thermal expansion coefficient | 6.3 10-6/K |
TaC coating Hardness (HK) | 2000 HK |
Resistance | 1×10-5 Ohm*cm |
Thermal stability | <2500℃ |
Graphite size changes | -10~-20um |
Coating thickness | ≥20um typical value (35um±10um) |