China CVD SiC coating wafer Epi susceptor Manufacturer, Supplier, Factory

This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.