China Aixtron reactor Manufacturer, Supplier, Factory

This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.