SiC Coating Collector Center

VeTek Semiconductor, a reputable CVD SiC coating manufacturer, brings you the cutting-edge SiC Coating Collector Center in Aixtron G5 MOCVD system. These SiC Coating Collector Center are meticulously designed with high purity graphite and boast an advanced CVD SiC coating, ensuring high temperature stability, corrosion resistance, high purity.Looking forward to cooperating with you!

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Product Description

VeTek Semiconductor SiC Coating Collector Center plays an important role in the production of Semiconducor EPI process. It is one of the key components used for gas distribution and control in an epitaxial reaction chamber.Welcome to inquiry us about SiC coating and TaC coating in our factory.

The role of the SiC Coating Collector Center is as follows:

● Gas distribution: SiC Coating Collector Center is used to introduce different gases into the epitaxial reaction chamber. It has multiple inlets and outlets that can distribute different gases to the desired locations to meet specific epitaxial growth needs.

● Gas control: SiC Coating Collector Center achieves precise control of each gas through valves and flow control devices. This precise gas control is essential for the success of the epitaxial growth process to achieve the desired gas concentration and flow rate, ensuring the quality and consistency of the film.

● Uniformity: The design and layout of the central gas collecting ring helps to achieve a uniform distribution of gas. Through reasonable gas flow path and distribution mode, the gas is evenly mixed in the epitaxial reaction chamber, so as to achieve uniform growth of the film.

In the manufacture of epitaxial products, SiC Coating Collector Center plays a key role in the quality, thickness and uniformity of the film. Through proper gas distribution and control, the SiC Coating Collector Center can ensure the stability and consistency of the epitaxial growth process, so as to obtain high-quality epitaxial films.

Compared to graphite collector center, SiC Coated Collector Center is improved thermal conductivity, enhanced chemical inertness, and superior corrosion resistance. The silicon carbide coating significantly enhances the thermal management capability of the graphite material, leading to better temperature uniformity and consistent film growth in epitaxial processes. Additionally, the coating provides a protective layer that resists chemical corrosion, extending the lifespan of the graphite components. Overall, the silicon carbide-coated graphite material offers superior thermal conductivity, chemical inertness, and corrosion resistance, ensuring enhanced stability and high-quality film growth in epitaxial processes.

CVD SIC FILM CRYSTAL STRUCTURE:

CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
CVD SiC coating Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K-1
Thermal Expansion(CTE)	4.5×10^-6K^-1