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In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.