China Solid SiC Edge Ring Manufacturer, Supplier, Factory

From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.

The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.