Wafer Carrier Tray
  • Wafer Carrier TrayWafer Carrier Tray

Wafer Carrier Tray

Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.

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Product Description

You can rest assured to buy Wafer Carrier tray from our factory.

Vetek semiconductor mainly provides CVD SiC coating graphite parts like wafer carrier tray for the third generation semiconductor SiC-CVD equipment, and is dedicated to providing advanced and competitive production equipment for the industry. SiC-CVD equipment is used for the growth of homogeneous single crystal thin film epitaxial layer on silicon carbide substrate, SiC epitaxial sheet is mainly used for manufacturing power devices such as Schottky diode, IGBT, MOSFET and other electronic devices.

The equipment closely combines the process and equipment. The SiC-CVD equipment has obvious advantages in high production capacity, 6/8 inch compatibility, competitive cost, continuous automatic growth control for multiple furnaces, low defect rate, maintenance convenience and reliability through the design of temperature field control and flow field control. Combined with the SiC coated wafer carrier tray provided by our Vetek Semiconductor, it can improve the production efficiency of the equipment, extend the life and control the cost.

Vetek semiconductor's wafer carrier tray mainly has high purity, good graphite stability, high processing precision, plus CVD SiC coating, high temperature stability: Silicon-carbide coatings have excellent high temperature stability and protect the substrate from heat and chemical corrosion in extremely high temperature environments.

Hardness and wear resistance: silicon-carbide coatings usually have a high hardness, providing excellent wear resistance and extending the service life of the substrate.

Corrosion resistance: The silicon carbide coating is corrosion resistant to many chemicals and can protect the substrate from corrosion damage.

Reduced coefficient of friction: silicon-carbide coatings usually have a low coefficient of friction, which can reduce friction losses and improve the working efficiency of components.

Thermal conductivity: The silicon carbide coating usually has good thermal conductivity, which can help the substrate better disperse heat and improve the heat dissipation effect of the components.

In general, the CVD silicon carbide coating can provide multiple protection for the substrate, extend its service life and improve its performance.


Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


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Overview of the semiconductor chip epitaxy industry chain:


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