English
Home > Products
  • SiC Coating Heater

    • China SiC Coating Heater Manufacturer, Supplier, Factory

    As a professional SiC Coating Heater manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC Coating Heater made in China, you can leave us a message.

    Related Products

    Hot Products

    • Vertical Column Wafer Boat & Pedestal

      Vertical Column Wafer Boat & Pedestal

      As a professional Vertical Column Wafer Boat & Pedestal manufacturer and supplier in China, Vetek Semiconductor's Vertical Column Wafer Boat & Pedestal is made of high-purity quartz or silicon carbon ceramic (SiC) materials, with excellent high temperature resistance, chemical stability and mechanical strength, and is an indispensable core component in the semiconductor manufacturing process. Welcome to your further consultation.
    • SiN substrate

      SiN substrate

      VeTek Semiconductor is a leading manufacturer and supplier of SiN Substrate products in China. Our Silicon Nitride substrate has excellent thermal conductivity, excellent chemical stability and corrosion resistance, and excellent strength, making it a high-performance material for semiconductor applications. VeTekSemi SiN substrate ensures that you benefit from cutting-edge technology in the field of semiconductor processing, strict quality control, and welcomes your further consultation.
    • TaC Coated Ring for SiC Epitaxial Reactor

      TaC Coated Ring for SiC Epitaxial Reactor

      VeTek Semiconductor is a large-scale TaC Coated Ring for SiC Epitaxial Reactor manufacturer and innovator in China.We have been specialized in TaC coating for many years.Our products have high purity, high stability, excellent corrosion resistance, high bond strength.We look forward to becoming your long-term partner in China.
    • SiC Crystal Growth New Technology

      SiC Crystal Growth New Technology

      Vetek Semiconductor's ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) can be used as a source material for growing silicon carbide crystals by physical vapor transport (PVT). In SiC Crystal Growth New Technology, the source material is loaded into a crucible and sublimated onto a seed crystal. Use the discarded CVD-SiC blocks to recycle the material as a source for growing SiC crystals. Welcome to establish a partnership with us.
    • Wafer Lift Pin

      Wafer Lift Pin

      VeTek Semiconductor is a leading EPI Wafer Lift Pin manufacturer and innovator in China.We have been specialized in SiC coating on surface of graphite for many years. We offer a EPI Wafer Lift Pin for Epi process. With high quality and competitive price,we welcome you to visit our factory in China.
    • CVD SiC Block for SiC Crystal Growth

      CVD SiC Block for SiC Crystal Growth

      VeTek Semiconductor focuses on the research and development and industrialization of CVD-SiC bulk sources, CVD SiC coatings, and CVD TaC coatings. Taking CVD SiC block for SiC Crystal Growth as an example, the product processing technology is advanced, the growth rate is fast, high temperature resistance, and corrosion resistance are strong. Welcome to inquire.
    • Related Blog
    • Reviews

    • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

      This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • GaN-based low-temperature epitaxy technology

      This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

    • Material of silicon carbide epitaxy

      The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

    Related Search

    SIC COATING Heater

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept