SiC coated deep UV LED susceptor is designed for MOCVD process to support efficient and stable deep UV LED epitaxial layer growth. VeTek Semiconductor is a leading manufacturer and supplier of SiC coated deep UV LED susceptor in China. We have rich experience and have established long-term cooperative relationships with many LED epitaxial manufacturers.We are the top domestic manufacturer of susceptor products for LEDs. After years of verification, our product life span is on par with that of top international manufacturers. Looking forward to your inquiry.
SiC coated deep UV LED susceptor is the core bearing component in MOCVD (metal organic chemical vapor deposition) equipment. The susceptor directly affects the uniformity, thickness control and material quality of deep UV LED epitaxial growth, especially in the growth of aluminum nitride (AlN) epitaxial layer with high aluminum content, the design and performance of the susceptor are crucial.
SiC coated deep UV LED susceptor is specially optimized for deep UV LED epitaxy, and is precisely designed based on thermal, mechanical and chemical environmental characteristics to meet stringent process requirements.
VeTek Semiconductor uses advanced processing technology to ensure uniform heat distribution of the susceptor within the operating temperature range, avoiding non-uniform growth of the epitaxial layer caused by temperature gradient. Precision processing controls surface roughness, minimizes particle contamination, and improves the thermal conductivity efficiency of wafer surface contact.
VeTek Semiconductor uses SGL graphite as the material, and the surface is treated with CVD SiC coating, which can withstand NH3, HCl and high temperature atmosphere for a long time. VeTek Semiconductor's SiC coated deep UV LED susceptor matches the thermal expansion coefficient of AlN/GaN epitaxial wafers, reducing wafer warping or cracking caused by thermal stress during the process.
Most importantly, VeTek Semiconductor's SiC coated deep UV LED susceptor perfectly adapts to mainstream MOCVD equipment (including Veeco K465i, EPIK 700, Aixtron Crius, etc.). Supports customized services for wafer size (2~8 inches), wafer slot design, process temperature and other requirements.
● Deep UV LED preparation: Applicable to the epitaxial process of devices in the band below 260 nm (UV-C disinfection, sterilization and other fields).
● Nitride semiconductor epitaxy: Used for epitaxial preparation of semiconductor materials such as gallium nitride (GaN) and aluminum nitride (AlN).
● Research-level epitaxial experiments: Deep UV epitaxy and new material development experiments in universities and research institutions.
With the support of a strong technical team, VeTek Semiconductor is able to develop susceptors with unique specifications and functions according to customer needs, support specific production processes, and provide long-term services.
Basic physical properties of CVD SiC coating |
|
Property |
Typical Value |
Crystal Structure |
FCC β phase polycrystalline, mainly (111) oriented |
SiC coating Density |
3.21 g/cm³ |
CVD SiC coating Hardness |
2500 Vickers hardness(500g load) |
Grain Size |
2~10μm |
Chemical Purity |
99.99995% |
Heat Capacity |
640 J·kg-1·K-1 |
Sublimation Temperature |
2700℃ |
Flexural Strength |
415 MPa RT 4-point |
Young' s Modulus |
430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity |
300W·m-1·K-1 |
Thermal Expansion(CTE) |
4.5×10-6K-1 |