LPE SiC EPI Halfmoon

LPE SiC Epi Halfmoon by VeTek Semiconductor, a revolutionary product designed to elevate LPE reactor SiC epitaxy processes. This cutting-edge solution boasts several key features that ensure superior performance and efficiency throughout your manufacturing operations.Looking forward to setting up long term cooperation with you.

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Product Description

As the professional manufacturer, VeTek Semiconductor would like to provide you high quality LPE SiC Epi Halfmoon.

The LPE SiC Epi Halfmoon offers exceptional precision and accuracy, guaranteeing uniform growth and high-quality epitaxial layers. Its innovative design and advanced manufacturing techniques provide optimal wafer support and thermal management, delivering consistent results and minimizing defects.

In addition, the LPE SiC Epi Halfmoon is coated with a premium tantalum carbide (TaC) layer, enhancing its performance and durability. This TaC coating significantly improves thermal conductivity, chemical resistance, and wear resistance, safeguarding the product and extending its lifespan.

The integration of the TaC coating in the LPE SiC Epi Halfmoon brings significant improvements to your process flow. It enhances thermal management, ensuring efficient heat dissipation and maintaining a stable growth temperature. This improvement leads to enhanced process stability, reduced thermal stress, and improved overall yield.

Furthermore, the TaC coating minimizes material contamination, allowing for a cleaner and more

controlled epitaxy process. It acts as a barrier against unwanted reactions and impurities, resulting in higher purity epitaxial layers and improved device performance.

Choose VeTek Semiconductor's LPE SiC Epi Halfmoon for unrivaled epitaxy processes. Experience the benefits of its advanced design, precision, and the transformative power of the TaC coating in optimizing your manufacturing operations. Elevate your performance and achieve exceptional results with VeTek Semiconductor's industry-leading solution.

Product parameter of the LPE SiC Epi Halfmoon:

Physical properties of TaC coating
Density	14.3 (g/cm³)
Specific emissivity	0.3
Thermal expansion coefficient	6.3 10-6/K
Hardness (HK)	2000 HK
Resistance	1×10-5 Ohm*cm
Thermal stability	<2500℃
Graphite size changes	-10~-20um
Coating thickness	≥20um typical value (35um±10um)