English
Home > Products
  • SiC coating graphite parts

    • China SiC coating graphite parts Manufacturer, Supplier, Factory

    As a professional SiC coating graphite parts manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC coating graphite parts made in China, you can leave us a message.

    Related Products

    Hot Products

    • Silicon-based GaN Epitaxial Susceptor

      Silicon-based GaN Epitaxial Susceptor

      VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Silicon-based GaN Epitaxial Susceptor. The susceptor semiconductor is used in VEECO K465i GaN MOCVD system, high purity, high temperature resistance, corrosion resistance, welcome to inquire and cooperate with us!
    • Semiconductor Quartz Bell Jar

      Semiconductor Quartz Bell Jar

      Vetek Semiconductor is a professional Semiconductor Quartz Bell Jar manufacturer and supplier in China. Our Semiconductor Quartz Bell Jar is widely used in key components of semiconductor manufacturing equipment, especially in CVD, diffusion, oxidation and PVD processes. Vetek Semiconductor is committed to providing advanced Semiconductor Quartz Bell Jar products and technical solutions for the semiconductor industry. Welcome your further inquiries.
    • Tantalum Carbide Coated Halfmoon Part for LPE

      Tantalum Carbide Coated Halfmoon Part for LPE

      VeTek Semiconductor is a large-scale Tantalum Carbide Coated Halfmoon Part for LPE manufacturer and innovator in China.We have been specialized in TaC coating for many years.Our products can withstand temperatures above 2000 degrees Celsius, prolong the lifespan of consumables.We look forward to becoming your long-term partner in China.
    • Silicon Carbide Epitaxy Wafer Carrier

      Silicon Carbide Epitaxy Wafer Carrier

      VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.
    • LPE SI EPI Susceptor Set

      LPE SI EPI Susceptor Set

      VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4'' wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
    • TaC Coated Guide Ring

      TaC Coated Guide Ring

      VeTek Semiconductor is a leading TaC Coated Guide Ring manufacturer and innovator in China.We have been specialized in ceramic coating for many years.TaC Coated Guide Ring are primarily used to guide and control airflow, enhancing the yield of single crystal growth. Welcome to inquiry us for further information.
    • Related Blog
    • Reviews

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • What is semiconductor epitaxy process?

      It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Roll up! Two major manufacturers are about to mass produce 8-inch silicon carbide

      As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept