Solid SiC wafer carrier

VeTek Semiconductor's solid SiC wafer carrier is designed for high temperature and corrosion resistant environments in semiconductor epitaxial processes and is suitable for all types of wafer manufacturing processes with high purity requirements. VeTek Semiconductor is a leading wafer carrier supplier in China and looks forward to becoming your long-term partner in the semiconductor industry.

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Product Description

The solid SiC wafer carrier is a component manufactured for the high temperature, high pressure, and corrosive environment of the semiconductor epitaxial process, and is suitable for various wafer manufacturing processes with high purity requirements.

The solid SiC wafer carrier covers the edge of the wafer, protects the wafer and accurately positions it, ensuring the growth of high-quality epitaxial layers. SiC materials are widely used in processes such as liquid phase epitaxy (LPE), chemical vapor deposition (CVD), and metal organic vapor deposition (MOCVD) due to their excellent thermal stability, corrosion resistance, and outstanding thermal conductivity. VeTek Semiconductor's solid SiC wafer carrier has been verified in multiple harsh environments and can effectively ensure the stability and efficiency of the wafer epitaxial growth process.

Vapor-phase epitaxial growth method

The solid SiC wafer carrier Product Features

● Ultra-high temperature stability: Solid SiC wafer carriers can remain stable at temperatures up to 1500°C and are not prone to deformation or cracking.

● Excellent chemical corrosion resistance: Using high-purity silicon carbide materials, it can resist corrosion from a variety of chemicals including strong acids, strong alkalis and corrosive gases, extending the service life of the wafer carrier.

● High thermal conductivity: Solid SiC wafer carriers have excellent thermal conductivity and can quickly and evenly disperse heat during the process, helping to maintain the stability of wafer temperature and improve the uniformity and quality of the epitaxial layer.

● Low particle generation: SiC materials have a natural low particle generation characteristic, which reduces the risk of contamination and can meet the strict requirements of the semiconductor industry for high purity.

Technical specifications:

Parameter	Description
Material	High-purity solid silicon carbide
Applicable wafer size	4-inch, 6-inch, 8-inch, 12-inch (customizable)
Maximum temperature tolerance	Up to 1500°C
Chemical resistance	Acid and alkali resistance, fluoride corrosion resistance
Thermal conductivity	250 W/(m·K)
Particle generation rate	Ultra-low particle generation, suitable for high purity requirements
Customization options	Size, shape and other technical parameters can be customized as required

Why choose VeTek Semiconductor solid SiC wafer substrate carrier ring?

● Reliability: After rigorous testing and actual verification by end customers, it can provide long-term and stable support under extreme conditions and reduce the risk of process interruption.

● High-quality materials: Made of the highest quality SiC materials, ensure that each solid SiC wafer carrier meets the industry's high standards.

● Customization service: Support customization of multiple specifications and technical requirements to meet specific process needs.

If you need more product information or to place an order, please contact us. We will provide professional consultation and solutions based on your specific needs to help you improve production efficiency and reduce maintenance costs.