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Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

Tantalum carbide (TaC) coatings are widely used in the semiconductor field, mainly for epitaxial growth reactor components, single crystal growth key components, high-temperature industrial components, MOCVD system heaters and wafer carriers.Its excellent high temperature resistance and corrosion resistance can improve equipment durability, yield and crystal quality, reduce energy consumption and improve stability.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.