Ultra Pure Graphite Lower Halfmoon

VeTek Semiconductor is a leading supplier of customized Ultra Pure Graphite Lower Halfmoon in China, specializing in advanced materials for many years. Our Ultra Pure Graphite Lower Halfmoon is specifically designed for SiC epitaxial equipment, ensuring excellent performance. Made from ultra-pure imported graphite, it offers reliability and durability. Visit our factory in China to explore our high-quality Ultra Pure Graphite Lower Halfmoon firsthand.

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Product Description

VeTek Semiconductor is a professional manufacturer dedicated to providing Ultra Pure Graphite Lower Halfmoon. Our products Ultra Pure Graphite Lower Halfmoon are specifically designed for SiC epitaxial chambers and offer superior performance and compatibility with various equipment models.

Features:

Connection: VeTek Semiconductor Ultra Pure Graphite Lower Halfmoon is designed to connect with quartz tubes, facilitating gas flow to drive the rotation of the carrier base.

Temperature Control: The product allows for temperature control, ensuring optimal conditions within the reaction chamber.

Non-Contact Design: Installed inside the reaction chamber, our Ultra Pure Graphite Lower Halfmoon does not directly contact the wafers, ensuring the integrity of the process.

Application Scenario:

Our Ultra Pure Graphite Lower Halfmoon serves as a critical component in SiC epitaxial chambers, where it helps maintain impurity content below 5 ppm. By closely monitoring parameters such as thickness and doping concentration uniformity, we ensure the highest quality epitaxial layers.

Compatibility:

VeTek Semiconductor's Ultra Pure Graphite Lower Halfmoon is compatible with a wide range of equipment models, including LPE, NAURA, JSG, CETC, NASO TECH, and so on.

We invite you to visit our factory in China to explore our high-quality Ultra Pure Graphite Lower Halfmoon firsthand.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1