English
Home > Products> LPE silicon carbide epitaxial growth reactor

China LPE silicon carbide epitaxial growth reactor Manufacturer, Supplier, Factory

As a professional LPE silicon carbide epitaxial growth reactor manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable LPE silicon carbide epitaxial growth reactor made in China, you can leave us a message.

Related Products

Hot Products

  • 4H N-type SiC Substrate

    4H N-type SiC Substrate

    As a professional 4H N-type SiC Substrate manufacturer and supplier in China, Vetek Semiconductor 4H N-type SiC Substrate aims to provide advanced technology and product solutions for the semiconductor industry. Our 4H N-type SiC Wafer is carefully designed and manufactured with high reliability to meet the demanding requirements of the semiconductor industry. We welcome your further inquiries.
  • CVD SiC Coating Nozzle

    CVD SiC Coating Nozzle

    Vetek Semiconductor’s CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications.Looking forward to setting up long term cooperation with you.
  • Silicon On Insulator Wafer

    Silicon On Insulator Wafer

    VeTek Semiconductor is a professional Chinese manufacturer of Silicon On Insulator Wafer, ALD Planetary Base, and TaC Coated Graphite Base. VeTek Semiconductor's Silicon On Insulator Wafer is an important semiconductor substrate material, and its excellent product characteristics make it play a key role in high-performance, low-power, high-integration and RF applications. We look forward to further cooperation with you.
  • Epi wafer holder

    Epi wafer holder

    VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
  • GaN on SiC epi susceptor

    GaN on SiC epi susceptor

    VeTek Semiconductor is a professional manufacturer of GaN on SiC epi susceptor, CVD SiC coating, and CVD TAC COATING graphite susceptor in China. Among them, GaN on SiC epi susceptor plays a vital role in semiconductor processing. Through its excellent thermal conductivity, high temperature processing ability and chemical stability, it ensures the high efficiency and material quality of the GaN epitaxial growth process. We sincerely look forward to your further consultation.
  • TaC coated ring for PVT growth of SiC single crystal

    TaC coated ring for PVT growth of SiC single crystal

    As one of the leading TaC coating product suppliers in China, VeTek Semiconductor is able to provide customers with high-quality TaC coating customized parts. TaC coated ring for PVT growth of SiC single crystal is one of VeTek Semiconductor's most outstanding and mature products. It plays an important role in the PVT growth of SiC crystal process and can help customers grow high-quality SiC crystals. Looking forward to your inquiry.
  • Related Blog
  • Reviews

  • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

    VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

  • Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

    Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Sanan Optoelectronics Co., Ltd.: 8-inch SiC chips are expected to be put into production in December!

    As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept