Epi wafer holder

The working principle of Epi Wafer Holder is to hold the wafer during the epitaxy process to ensure that the wafer is in a precise temperature and gas flow environment so that the epitaxial material can be evenly deposited on the wafer surface. Under high temperature conditions, this product can firmly fix the wafer in the reaction chamber while avoiding problems such as scratches and particle contamination on the wafer surface.

Epi Wafer Holder is usually made of silicon carbide (SiC). SiC has a low thermal expansion coefficient of about 4.0 x 10^^-6 /°C, which helps to maintain the dimensional stability of the holder at high temperatures and avoid wafer stress caused by thermal expansion. Combined with its excellent high temperature stability (able to withstand high temperatures of 1,200°C~1,600°C), corrosion resistance and thermal conductivity (thermal conductivity is usually 120-160 W/mK), SiC is an ideal material for epitaxial wafer holders.

Epi Wafer Holder plays a vital role in the epitaxial process. Its main function is to provide a stable carrier in a high temperature, corrosive gas environment to ensure that the wafer is not affected during the epitaxial growth process, while ensuring the uniform growth of the epitaxial layer. Specifically as followings:

Wafer fixation and precise alignment: The high-precision designed Epi wafer holder firmly fixes the wafer in the geometric center of the reaction chamber to ensure that the wafer surface forms the best contact angle with the reaction gas flow. This precise alignment not only ensures the uniformity of epitaxial layer deposition, but also effectively reduces the stress concentration caused by wafer position deviation.

Uniform heating and thermal field control: The excellent thermal conductivity of silicon carbide (SiC) material (thermal conductivity is usually 120-160 W/mK) provides efficient heat transfer for wafers in high temperature epitaxial environments. At the same time, the temperature distribution of the heating system is finely controlled to ensure uniform temperature across the entire wafer surface. This effectively avoids thermal stress caused by excessive temperature gradients, thereby significantly reducing the probability of defects such as wafer warping and cracks.

Particle contamination control and material purity: The use of high-purity SiC substrates and CVD-coated graphite materials greatly reduces the generation and diffusion of particles during the epitaxy process. These high-purity materials not only provide a clean environment for the growth of the epitaxial layer, but also help reduce interface defects, thereby improving the quality and reliability of the epitaxial layer.

Corrosion resistance: Holder needs to be able to withstand corrosive gases (such as ammonia, trimethyl gallium, etc.) used in MOCVD or LPCVD processes, so the excellent corrosion resistance of SiC materials helps to extend the service life of the bracket and ensure the reliability of the production process.

VeTek Semiconductor supports customized product services, so Epi Wafer Holder can provide you with customized product services based on the size of the wafer (100mm, 150mm, 200mm, 300mm, etc.). We sincerely hope to be your long-term partner in China.

SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating：

VeTek Semiconductor Epi wafer holder Production shops: