TaC coated ring for PVT growth of SiC single crystal

At present, SiC power devices are becoming more and more popular, so the related semiconductor device fabrication is more important, and the properties of sic must be improved. SiC is the substrate in semiconductor. As an indispensable raw material for SiC devices, how to efficiently produce SiC crystal is one of the important topics. In the process of growing SiC crystal by PVT (physical vapor transport), VeTek Semiconductor's TaC coated ring for PVT growth of SiC single crystal plays an indispensable and important role. After careful design and manufacturing, this TaC coated ring provides you with excellent performance and reliability, ensuring the efficiency and stability of the SiC crystal growth process.

TaC coated ring Product Features

(I) High-quality TaC coating material and graphite material

TaC coated ring for PVT growth of SiC single crystal using high-quality SGL graphite material as the substrate, it has good thermal conductivity and extremely high material stability. At the same time, high-purity CVD TaC (tantalum carbide) is used as the coating material, which has extremely high hardness, melting point and chemical stability. TaC coating can maintain excellent performance in the high temperature (usually up to 2000℃ or more) and highly corrosive environment of SiC crystal growth by PVT method, effectively resist chemical reactions and physical erosion during SiC growth, greatly extend the service life of the coating ring, and reduce equipment maintenance costs and downtime.

10 μm                               300 μm

TaC coating with high crystallinity and excellent uniformity

(II) Precise coating process

VeTek Semiconductor's advanced CVD coating process technology ensures that the TaC coating is evenly and densely covered on the surface of the ring. The coating thickness can be precisely controlled at ±5um, ensuring the uniform distribution of the temperature field and air flow field during the crystal growth process, which is conducive to the high-quality and large-size growth of SiC crystals.

(III) Excellent high-temperature stability and thermal shock resistance

In the high-temperature environment of PVT method, TaC coated ring for PVT growth of SiC single crystal shows excellent thermal stability. It can withstand long-term high-temperature baking without deformation, cracking or coating shedding. During the growth of SiC crystals, the temperature changes frequently. VeTek Semiconductor's TaC coated ring for PVT growth of SiC single crystal have excellent thermal shock resistance and can quickly adapt to rapid changes in temperature without cracking or damage. Further improve production efficiency and product quality.

VeTek Semiconductor is well aware that different customers have different PVT SiC crystal growth equipment and processes, so it provides customized services for TaC coated ring for PVT growth of SiC single crystal. Whether it is the size specifications of the ring body, coating thickness or special performance requirements, we can tailor it according to your requirements to ensure that the product perfectly matches your equipment and process, providing you with the most optimized solution.

Physical properties of TaC coating

VeTek Semiconductor TaC coated ring production shops