silicon carbide ceramic coating graphite heater

VeTek Semiconductor Silicon Carbide Ceramic Coating Graphite Heater combines the excellent electrical and thermal conductivity of graphite with the high temperature resistance, corrosion resistance and wear resistance of silicon carbon ceramic coating, and is designed for harsh semiconductor manufacturing environments. 

Silicon carbide ceramic coating graphite heater is mainly used in vacuum coating (evaporation) equipment, and the methods commonly used are PCD (Plasma Chemical Drying) and PVD (Physical vapor deposition). This product has played an important role in promoting technological progress and improving production efficiency in the semiconductor industry. We sincerely look forward to further cooperation with you.

The material and structural features of Silicon Carbide Ceramic Coating Graphite Heater are as follows:

Graphite substrate: Graphite is known for its high thermal conductivity and low thermal expansion coefficient. It can respond quickly to temperature changes and maintain structural stability at high temperatures.

Silicon carbon ceramic coating: SiC coating is evenly coated on the graphite surface through chemical vapor deposition or other advanced processes. SiC has extremely high hardness and chemical corrosion resistance, which can protect the graphite substrate from high-temperature oxidation and corrosive environments.

The special product structural design of Silicon Carbide Ceramic Coating Graphite Heater determines the irreplaceable product advantages of this product in the semiconductor processing process:

Efficient and uniform heating:

Thermal conductivity: The high thermal conductivity of graphite enables the heater to quickly reach and maintain the required temperature, and the SiC coating ensures uniform distribution of heat. This is especially important for semiconductor processes that require precise temperature control, such as rapid thermal processing (RTP) and chemical vapor deposition (CVD).

Temperature uniformity: Through uniform heat distribution, Silicon Carbide Ceramic Coating Graphite Heater can effectively reduce thermal stress and temperature gradient, ensuring the consistency and quality stability of semiconductor wafers throughout the heating process.

Anti-corrosion protection:

Chemical resistance: The chemical corrosion resistance of SiC coating enables the heater to operate stably and for a long time in corrosive gas and chemical environments, avoiding damage to the graphite substrate. This feature is particularly critical in processes such as chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).

Oxidation resistance: At high temperatures, SiC coating can prevent oxidation of the graphite substrate, extend the service life of the heater, and reduce the frequency and cost of equipment maintenance.

Reduce particle contamination:

Surface stability: SiC coating is not only wear-resistant, but also prevents particles from falling off the material surface due to thermal cycling or chemical reactions, thereby reducing the risk of particle contamination that may occur during semiconductor manufacturing and ensuring a high-cleanliness process environment.

Improve process reliability and efficiency:

Long-life design: Due to the combination of the mechanical strength of graphite and the wear resistance of SiC coating, Silicon Carbide Ceramic Coating Graphite Heater can maintain high-efficiency operation for a long time under harsh process conditions, significantly improving the overall reliability of the equipment.

Efficient energy utilization: The high thermal conductivity of graphite and the high-temperature stability of SiC coating enable the heater to reduce energy consumption while improving temperature control accuracy, thereby improving the overall efficiency of semiconductor production.

Basic physical properties of Silicon Carbide Ceramic Coating Graphite Heater:

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Overview of the semiconductor chip epitaxy industry chain:

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