VeTek Semiconductor presents the TaC Coating Susceptor, With its exceptional TaC coating, this susceptor offers a multitude of advantages that set it apart from conventional solutions.Integrating seamlessly into existing systems, the TaC Coating Susceptor from VeTek Semiconductor guarantees compatibility and efficient operation. Its reliable performance and high-quality TaC coating consistently deliver exceptional results in SiC epitaxy processes.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
VeTek Semiconductor's TaC coated susceptor and TaC coated ring work together in the LPE silicon carbide epitaxial growth reactor:
● High-Temperature Resistance: The TaC coating susceptor has excellent high-temperature resistance, able to withstand the extreme temperatures up to 1500°C in the LPE reactor. This ensures the equipment and components do not deform or get damaged during long-term operation.
● Chemical Stability: The TaC coating susceptor performs exceptionally well in the corrosive silicon carbide growth environment, effectively shielding the reactor components from corrosive chemical attack, thereby extending their service life.
● Thermal Stability: The TaC coating susceptor has good thermal stability, maintaining the surface morphology and roughness to ensure the uniformity of the temperature field in the reactor, which is beneficial for the high-quality growth of the silicon carbide epitaxial layers.
● Anti-Contamination: The smooth TaC coated surface and superior TPD (Temperature Programmed Desorption) performance can minimize the accumulation and adsorption of particles and impurities inside the reactor, preventing contamination of the epitaxial layers.
In summary, the TaC coated susceptor and ring play a critical protective role in the LPE silicon carbide epitaxial growth reactor, ensuring the long-term stable operation of the equipment and the high-quality growth of the epitaxial layers.
Physical properties of TaC coating | |
Coating Density | 14.3 (g/cm³) |
Specific emissivity | 0.3 |
Thermal expansion coefficient | 6.3 10-6/K |
TaC coating Hardness (HK) | 2000 HK |
Resistance | 1×10-5 Ohm*cm |
Thermal stability | <2500℃ |
Graphite size changes | -10~-20um |
Coating thickness | ≥20um typical value (35um±10um) |