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    • China High-Purity Crucibles Manufacturer, Supplier, Factory

    As a professional High-Purity Crucibles manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable High-Purity Crucibles made in China, you can leave us a message.

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    • Epi wafer holder

      Epi wafer holder

      VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
    • Vitreous Carbon Coated Graphite Crucible for E-beam Gun

      Vitreous Carbon Coated Graphite Crucible for E-beam Gun

      VeTek Semiconductor is a leading supplier of customized Vitreous Carbon Coated Graphite Crucible for E-beam Gun in China, specializing in advanced materials for many years. Our Vitreous Carbon Coated Graphite Crucible is specifically designed for E-beam Gun, ensuring excellent performance. Made from ultra-pure imported graphite, it offers reliability and durability. Visit our factory in China to explore deep cooperation.
    • SiC coating halfmoon graphite parts

      SiC coating halfmoon graphite parts

      As a professional semiconductor manufacturer and supplier, VeTek Semiconductor can provide a variety of graphite components required for SiC epitaxial growth systems. These SiC coating halfmoon graphite parts are designed for the gas inlet section of the epitaxial reactor and play a vital role in optimizing the semiconductor manufacturing process. VeTek Semiconductor always strives to provide customers with the best quality products at the most competitive prices. VeTek Semiconductor looks forward to becoming your long-term partner in China.
    • 4H Semi Insulating Type SiC Substrate

      4H Semi Insulating Type SiC Substrate

      Vetek Semiconductor is a professional 4H Semi Insulating Type SiC Substrate manufacturer and supplier in China. Our 4H Semi Insulating Type SiC Substrate is widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced 4H Semi Insulating Type SiC product solutions for the semiconductor industry. Welcome your further inquiries.
    • SiC Coated Top Plate for LPE PE2061S

      SiC Coated Top Plate for LPE PE2061S

      VeTek Semiconductor is a leading SiC Coated Top Plate for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Top Plate for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Top Plate for LPE PE2061S is the top together with barrel susceptor.This CVD SiC coated plate boasts high purity, excellent thermal stability, and uniformity, making it suitable for growing high-quality epitaxial layers.We welcome you to visit our factory in China.
    • TaC Coated Deep UV LED Susceptor

      TaC Coated Deep UV LED Susceptor

      VeTek Semiconductor is an integrated supplier engaged in research and development, production, design, and sales of TaC coatings. We specialize in manufacturing edge-cutting TaC Coated UV LED Susceptors, which are crucial components in the LED epitaxy process. Our TaC Coated Deep UV LED Susceptor offer high thermal conductivity, high mechanical strength, improved production efficiency, and epitaxial wafer protection. Welcome to inquiry us.
    • Related Blog
    • Reviews

    • How much do you know about CVD SiC ?

      CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

    • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

      The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • ALD Atomic Layer Deposition Recipe

      Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

    • Silicon carbide nanomaterials

      Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

    • Chip Manufacturing: Atomic Layer Deposition (ALD)

      In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

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