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China Dry Etching Manufacturer, Supplier, Factory

As a professional Dry Etching manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Dry Etching made in China, you can leave us a message.

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  • SiC Coated Support for LPE PE2061S

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    VeTek Semiconductor is a leading SiC Coated Support for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Support for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Support for LPE PE2061S is the bottom of barrel susceptor.It can withstand 1600 degrees Celsius high temperature, extend product life of graphite spare part.Welcome to send us inquiry.
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    TaC Coated Ring for SiC Epitaxial Reactor

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  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    VeTek Semiconductor's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.
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  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

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    This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

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    The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

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    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

  • What is the temperature gradient of the thermal field of a single crystal furnace?

    The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

  • Diamond - the future star of semiconductors

    Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

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