SiC Coated Support for LPE PE2061S
VeTek Semiconductor is a leading SiC Coated Support for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Support for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Support for LPE PE2061S is the bottom of barrel susceptor.It can withstand 1600 degrees Celsius high temperature, extend product life of graphite spare part.Welcome to send us inquiry.
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Product Description
High quality SiC Coated Support for LPE PE2061S is offered by China manufacturer VeTek Semiconductor. Buy SiC Coated Support for LPE PE2061S which is of high quality directly with low price.
The VeTeK Semiconductor SiC Coated Support for LPE PE2061S in silicon epitaxy equipment, used in conjunction with a barrel type susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.
The bottom plate is mainly used with the barrel epitaxial furnace, the barrel epitaxial furnace has a larger reaction chamber and a higher production efficiency than the flat epitaxial susceptor.
The support has a round hole design and is primarily used for exhaust outlet inside the reactor.
The VeTeK Semiconductor SiC Coated Support for LPE PE2061S is for Liquid Phase Epitaxy (LPE) Reactor System,with high purity,uniform coating,high-temperature stability, corrosion resistance, high hardness, excellent thermal conductivity, low thermal expansion coefficient, and chemical inertness.
Basic physical properties of CVD SiC coating:
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness（500g load） |
| Grain SiZe | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
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Related Category
Solid Silicon Carbide
Silicon Epitaxy
Silicon Carbide Epitaxy
MOCVD Technology
RTA/RTP Process
ICP/PSS Etching Process
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