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SiC Coated Support for LPE PE2061S
  • SiC Coated Support for LPE PE2061SSiC Coated Support for LPE PE2061S

SiC Coated Support for LPE PE2061S

VeTek Semiconductor is a leading SiC Coated Support for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Support for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Support for LPE PE2061S is the bottom of barrel susceptor.It can withstand 1600 degrees Celsius high temperature, extend product life of graphite spare part.Welcome to send us inquiry.

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Product Description

High quality SiC Coated Support for LPE PE2061S is offered by China manufacturer VeTek Semiconductor. Buy SiC Coated Support for LPE PE2061S which is of high quality directly with low price.

The VeTeK Semiconductor SiC Coated Support for LPE PE2061S in silicon epitaxy equipment, used in conjunction with a barrel type susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.

The bottom plate is mainly used with the barrel epitaxial furnace, the barrel epitaxial furnace has a larger reaction chamber and a higher production efficiency than the flat epitaxial susceptor.

The support has a round hole design and is primarily used for exhaust outlet inside the reactor.



The VeTeK Semiconductor SiC Coated Support for LPE PE2061S is for Liquid Phase Epitaxy (LPE) Reactor System,with high purity,uniform coating,high-temperature stability, corrosion resistance, high hardness, excellent thermal conductivity, low thermal expansion coefficient, and chemical inertness.


Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry chain:


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