SiC Coated MOCVD Susceptor

VeTek Semiconductor's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.

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Product Description

Find a huge selection of SiC Coated MOCVD Susceptor from China at VeTek Semiconductor. Provide professional after-sales service and the right price, looking forward to cooperation.

VeTek Semiconductor's MOCVD Epitaxial Susceptors are designed to withstand high temperature environments and harsh chemical conditions common in the wafer production process. Through precision engineering, these components are tailored to meet the stringent requirements of epitaxial reactor systems. Our MOCVD Epitaxial Susceptors are made of high-quality graphite substrates coated with a layer of silicon carbide (SiC), which not only has excellent high temperature and corrosion resistance, but also ensures uniform heat distribution, which is critical to maintaining consistent epitaxial film deposition.

In addition, our semiconductor susceptors have excellent thermal performance, which allows for fast and uniform temperature control to optimize the semiconductor growth process. They are able to withstand the attack of high temperature, oxidation, and corrosion, ensuring reliable operation even in the most challenging operating environments.

In addition, the SiC Coated MOCVD Susceptors are designed with a focus on uniformity, which is critical to achieving high-quality single crystal substrates. The achievement of flatness is essential to achieve excellent single crystal growth on the wafer surface.

At VeTek Semiconductor, our passion for exceeding industry standards is as important as our commitment to cost-effectiveness for our partners. We strive to provide products such as the MOCVD Epitaxial Susceptor to meet the ever-changing needs of semiconductor manufacturing and anticipate its development trends to ensure your operation is equipped with the most advanced tools. We look forward to building a long-term partnership with you and providing you with quality solutions.

Product parameter of the MOCVD Epitaxial Susceptor

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1