China 4" Wafer Epitaxy Manufacturer, Supplier, Factory

This article analyzes the product characteristics and application scenarios of tantalum carbide coating and silicon carbide coating from multiple perspectives.

It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

In an era of rapid technological development, 3D printing, as an important representative of advanced manufacturing technology, is gradually changing the face of traditional manufacturing. With the continuous maturity of technology and the reduction of costs, 3D printing technology has shown broad application prospects in many fields such as aerospace, automobile manufacturing, medical equipment, and architectural design, and has promoted the innovation and development of these industries.

Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.