China TaC Coating carrier Manufacturer, Supplier, Factory

Thin film deposition is vital in chip manufacturing, creating micro devices by depositing films under 1 micron thick via CVD, ALD, or PVD. These processes build semiconductor components through alternating conductive and insulating films.

Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.