TaC Coating Rotation Susceptor

VeTek Semiconductor TaC Coating Rotation Susceptor is a key component for wafer handling in semiconductor processing. Its TaC Coating has excellent high temperature tolerance (melting point up to 3880°C), chemical stability and corrosion resistance, which ensure high precision and high quality in wafer processing.

TaC Coating Rotation Susceptor (Tantalum Carbon Coating Rotation Susceptor) is a key equipment component used in semiconductor processing. It is usually installed in chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) equipment to support and rotate wafers to ensure uniform material deposition and efficient reaction. This type of product significantly improves the service life and performance of the equipment in high temperature and corrosive environments by coating the substrate with tantalum carbon (TaC) coating.

TaC Coating Rotation Susceptor is usually composed of TaC Coating and graphite or silicon carbide as the substrate material. TaC is an ultra-high temperature ceramic material with extremely high melting point (melting point up to 3880°C), hardness (Vickers hardness is about 2000 HK) and excellent chemical corrosion resistance. VeTek Semiconductor can effectively and evenly cover the tantalum carbon coating on the substrate material through CVD technology.

Rotation Susceptor is usually made of high thermal conductivity and high strength materials (graphite or silicon carbide), which can provide good mechanical support and thermal stability in high temperature environments. The perfect combination of the two determines the perfect performance of TaC Coating Rotation Susceptor in supporting and rotating wafers.

TaC Coating Rotation Susceptor supports and rotates the wafer in the CVD process. The Vickers hardness of TaC is about 2000 HK, which enables it to resist repeated friction of the material and play a good supporting role, thereby ensuring that the reaction gas is evenly distributed on the wafer surface and the material is evenly deposited. At the same time, the high temperature tolerance and corrosion resistance of TaC Coating enable it to be used for a long time in high temperature and corrosive atmospheres, which effectively avoids the contamination of the wafer and the carrier.

Moreover, the thermal conductivity of TaC is 21 W/m·K, which has good heat transfer. Therefore, TaC Coating Rotation Susceptor can heat the wafer evenly under high temperature conditions and ensure the uniformity of the gas deposition process through rotational motion, thereby maintaining the consistency and high quality of wafer growth.

Tantalum carbide (TaC) coating on a microscopic cross-section：

Physical properties of TaC coating：

TaC Coating Rotation Susceptor shops: