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    CVD SiC Coated Skirt

    VeTek Semiconductor is a leading manufacturer, innovator and leader of CVD SiC Coating and TAC Coating in China. For many years, we have been focusing on various CVD SiC Coating products such as CVD SiC coated Skirt, CVD SiC Coating Ring, CVD SiC Coating carrier, etc. VeTek Semiconductor supports customized product services and satisfactory product prices, and looks forward to your further consultation.
  • SiC coated Wafer Holder

    SiC coated Wafer Holder

    VeTek Semiconductor is a professional manufacturer and leader of SiC coated wafer holder products in China. SiC coated wafer holder is a wafer holder for the epitaxy process in semiconductor processing. It is an irreplaceable device that stabilizes the wafer and ensures the uniform growth of the epitaxial layer. Welcome your further consultation.
  • Aixtron G5 MOCVD Susceptors

    Aixtron G5 MOCVD Susceptors

    VeTek Semiconductor is a leading Aixtron G5 MOCVD Susceptors manufacturer and innovator in China. We have been specialized in SiC coating material for many years.This Aixtron G5 MOCVD Susceptors kit is a versatile and efficient solution for semiconductor manufacturing with its optimal size, compatibility, and high productivity.Welcome to inquiry us.
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • Vitreous Carbon Coated Graphite Crucible for E-beam Gun

    Vitreous Carbon Coated Graphite Crucible for E-beam Gun

    VeTek Semiconductor is a leading supplier of customized Vitreous Carbon Coated Graphite Crucible for E-beam Gun in China, specializing in advanced materials for many years. Our Vitreous Carbon Coated Graphite Crucible is specifically designed for E-beam Gun, ensuring excellent performance. Made from ultra-pure imported graphite, it offers reliability and durability. Visit our factory in China to explore deep cooperation.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    As a leading supplier of customized graphite crucibles in China, VeTek Semiconductor mainly provides Isostatic Graphite Crucible, SiC Coated Graphite Crucible Deflector, Glassy Carbon Coated Graphite Crucible, etc. Our graphite crucibles are made of high-purity graphite raw materials and manufactured through precision technology, with excellent high temperature resistance, corrosion resistance and thermal conductivity. Welcome to consult us.
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    This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

  • How thin can the Taiko process make silicon wafers?

    The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • GaN-based low-temperature epitaxy technology

    This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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