SiC coated Wafer Holder

VeTek Semiconductor’s SiC Coated Wafer Holder is usually used to fix and support wafers during semiconductor processing. It is a high-performance wafer carrier widely used in semiconductor manufacturing. By coating a layer of silicon carbide (SiC) on the surface of the substrate, the product can effectively prevent the substrate from corrosion, and improve the corrosion resistance and mechanical strength of the wafer carrier, ensuring the stability and precision requirements of the processing process.

SiC Coated Wafer Holder is usually used to fix and support wafers during semiconductor processing. It is a high-performance wafer carrier widely used in semiconductor manufacturing. By coating a layer of silicon carbide (SiC) on the surface of the substrate, the product can effectively prevent the substrate from corrosion, and improve the corrosion resistance and mechanical strength of the wafer carrier, ensuring the stability and precision requirements of the processing process.

Silicon carbide (SiC) has a melting point of about 2,730°C and has excellent thermal conductivity of about 120 – 180 W/m·K. This property can quickly dissipate heat in high-temperature processes and prevent overheating between the wafer and the carrier. Therefore, SiC Coated Wafer Holder usually uses silicon carbide (SiC) coated graphite as the substrate.

Combined with the extremely high hardness of SiC (Vickers hardness of about 2,500 HV), the silicon carbide (SiC) coating deposited by the CVD process can form a dense and strong protective coating, which greatly improves the wear resistance of the SiC Coated Wafer Holder.

VeTek Semiconductor's SiC Coated Wafer Holder is made of SiC coated graphite and is an indispensable key component in modern semiconductor epitaxy processes. It cleverly combines the excellent thermal conductivity of graphite (thermal conductivity is about 100-400 W/m·K at room temperature) and mechanical strength, and the excellent chemical corrosion resistance and thermal stability of silicon carbide (the melting point of SiC is about 2,730°C), perfectly meeting the stringent requirements of today's high-end semiconductor manufacturing environment.

This single-wafer design holder can accurately control the epitaxial process parameters, which helps to produce high-quality, high-performance semiconductor devices. Its unique structural design ensures that the wafer is handled with the most care and precision throughout the entire process, thereby ensuring the excellent quality of the epitaxial layer and improving the performance of the final semiconductor product.

As China's leading SiC Coated Wafer Holder manufacturer and leader, VeTek Semiconductor can provide customized products and technical services according to your equipment and process requirements. We sincerely hope to be your long-term partner in China.

SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating

VeTek Semiconductor SiC Coated Wafer Holder Productions Shops