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  • PyC Coating Rigid Felt Ring

    • China PyC Coating Rigid Felt Ring Manufacturer, Supplier, Factory

    As a professional PyC Coating Rigid Felt Ring manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable PyC Coating Rigid Felt Ring made in China, you can leave us a message.

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    • Ultra Pure Graphite Lower Halfmoon

      Ultra Pure Graphite Lower Halfmoon

      VeTek Semiconductor is a leading supplier of customized Ultra Pure Graphite Lower Halfmoon in China, specializing in advanced materials for many years. Our Ultra Pure Graphite Lower Halfmoon is specifically designed for SiC epitaxial equipment, ensuring excellent performance. Made from ultra-pure imported graphite, it offers reliability and durability. Visit our factory in China to explore our high-quality Ultra Pure Graphite Lower Halfmoon firsthand.
    • PSS Etching Carrier Plate for Semiconductor

      PSS Etching Carrier Plate for Semiconductor

      VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a high-quality, ultra-pure graphite carrier designed for wafer handling processes. Our carriers have excellent performance and can perform well in harsh environments, high temperatures and harsh chemical cleaning conditions. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
    • Semiconductor Quartz Bell Jar

      Semiconductor Quartz Bell Jar

      Vetek Semiconductor is a professional Semiconductor Quartz Bell Jar manufacturer and supplier in China. Our Semiconductor Quartz Bell Jar is widely used in key components of semiconductor manufacturing equipment, especially in CVD, diffusion, oxidation and PVD processes. Vetek Semiconductor is committed to providing advanced Semiconductor Quartz Bell Jar products and technical solutions for the semiconductor industry. Welcome your further inquiries.
    • EPI susceptor

      EPI susceptor

      VeTek Semiconductor's EPI susceptor is designed for the demanding epitaxial equipment applications. Its high-purity silicon carbide (SiC) coated graphite structure offers excellent heat resistance, uniform thermal uniformity for consistent epitaxial layer thickness and resistance, and long-lasting chemical resistance. We look forward to cooperating with you.
    • ALD Fused Quartz Pedestal

      ALD Fused Quartz Pedestal

      As a professional ALD Fused Quartz Pedestal products manufacturer and supplier in China, VeTek Semiconductor ALD Fused Quartz Pedestal is specifically designed for use in Atomic Layer Deposition (ALD), Low-Pressure Chemical Vapor Deposition (LPCVD) as well as diffusion wafer process, ensuring uniform deposition of thin films on wafer surfaces. Welcome to your further inquiries.
    • GaN Epitaxy susceptor

      GaN Epitaxy susceptor

      VeTek Semiconductor is a Chinese company that is a world-class manufacturer and supplier of GaN Epitaxy susceptor. We have been working in the semiconductor industry such as silicon carbide coatings and GaN Epitaxy susceptor for a long time. We can provide you with excellent products and favorable prices. VeTek Semiconductor looks forward to becoming your long-term partner.
    • Related Blog
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    • Chinese companies are reportedly developing 5nm chips with Broadcom!

      According to overseas news, two sources revealed on June 24 that ByteDance is working with US chip design company Broadcom to develop an advanced artificial intelligence (AI) computing processor, which will help ByteDance ensure an adequate supply of high-end chips amid tensions between China and the United States.

    • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

      The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

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