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  • Porous Graphite for SiC Crystal Growth

    • China Porous Graphite for SiC Crystal Growth Manufacturer, Supplier, Factory

    As a professional Porous Graphite for SiC Crystal Growth manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Porous Graphite for SiC Crystal Growth made in China, you can leave us a message.

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    • High Purity Porous Graphite

      High Purity Porous Graphite

      High Purity Porous Graphite provided by VeTek Semiconductor is an advanced semiconductor processing material. It is made of high-purity carbon material with excellent thermal conductivity, good chemical stability and excellent mechanical strength. This High Purity Porous Graphite plays an important role in the growth process of single crystal SiC. VeTek Semiconductor is committed to providing quality products at competitive prices and looks forward to becoming your long-term partner in China.
    • SiC Coating Cover Segments Inner

      SiC Coating Cover Segments Inner

      At VeTek Semiconductor, we specialize in the research, development, and industrialization of CVD SiC coating and CVD TaC coating. One exemplary product is the SiC Coating Cover Segments Inner, which undergoes extensive processing to achieve a highly precise and densely coated CVD SiC surface. This coating demonstrates exceptional resistance to high temperatures and provides robust corrosion protection. Feel free to contact us for any inquiries.
    • SiC Coating Epi susceptor

      SiC Coating Epi susceptor

      VeTek Semiconductor is a leading manufacturer, innovator and leader of SiC Coating Epi Susceptor products in China. For many years, we have been focusing on various SiC Coating products such as SiC Coating Epi Susceptor, SiC Coating Wafer Carrier, SiC Coating Susceptor, SiC coating ALD susceptor, etc. VeTek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry. Welcome your further consultation.
    • Solid SiC wafer carrier

      Solid SiC wafer carrier

      VeTek Semiconductor's solid SiC wafer carrier is designed for high temperature and corrosion resistant environments in semiconductor epitaxial processes and is suitable for all types of wafer manufacturing processes with high purity requirements. VeTek Semiconductor is a leading wafer carrier supplier in China and looks forward to becoming your long-term partner in the semiconductor industry.
    • Horizontal SiC Wafer Carrier

      Horizontal SiC Wafer Carrier

      VeTek Semiconductor is a professional manufacturer and supplier of TaC coated guide ring, horizontal SiC wafer carrier, and SiC coated susceptors in China. We are committed to providing perfect technical support and ultimate product solutions for the semiconductor industry. Welcome to contact us.
    • Solid SiC Gas Shower Head

      Solid SiC Gas Shower Head

      VeTek Semiconductor is a leading Solid SiC Gas Shower Head manufacturer and innovator in China.We have been specialized in semiconductor material for many years.VeTek Semiconductor Solid SiC Gas Shower Head’s multi-porosity design ensures that the heat generated in the CVD process can be dispersed, ensuring that the substrate is heated evenly.We look forward to setting up long-term with you in China.
    • Related Blog
    • Reviews

    • A complete explanation of the chip manufacturing process (2/2): from wafer to packaging and testing

      Thin film deposition is vital in chip manufacturing, creating micro devices by depositing films under 1 micron thick via CVD, ALD, or PVD. These processes build semiconductor components through alternating conductive and insulating films.

    • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • What is semiconductor epitaxy process?

      It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

    • What’s the difference between Silicon Carbide and Tantalum Carbide Coatings?

      This article analyzes the product characteristics and application scenarios of tantalum carbide coating and silicon carbide coating from multiple perspectives.

    • What is hot pressed SiC ceramics?

      Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

    • GaN-based low-temperature epitaxy technology

      This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

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