China Monocrystalline pulling Crucible Manufacturer, Supplier, Factory

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

The chip manufacturing process includes photolithography,etching, diffusion, thin film, ion implantation, chemical mechanical polishing, cleaning, etc. This article roughly explains how these processes are integrated in sequence to manufacture a MOSFET.

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN