Characteristics of silicon epitaxy

The characteristics of silicon epitaxy are as follows:

High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

Thin film uniformity: Silicon epitaxy can form a very uniform thin film under a certain guaranteed growth rate. At the same time, the uniformity of heating can be achieved, thereby reducing crystal structure defects and improving the quality of the crystal.

Strong controllability: Silicon epitaxy technology can accurately control the morphology, size and structure of silicon materials, and can grow complex crystal structures, such as multi-layer heterojunctions.

Large wafer diameter: Silicon epitaxial growth technology can grow silicon wafers with large diameters, and the ability to produce large-diameter silicon wafers is crucial for the production of semiconductors.

Process reliability: The silicon epitaxial process can be reused many times, which is of great significance for the mass production of semiconductor devices.