China HTCVD Manufacturer, Supplier, Factory

High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

Tantalum carbide (TaC) coating can significantly extend the life of graphite parts by improving high temperature resistance, corrosion resistance, mechanical properties and thermal management capabilities. Its high purity characteristics reduce impurity contamination, improve crystal growth quality, and enhance energy efficiency. It is suitable for semiconductor manufacturing and crystal growth applications in high-temperature, highly corrosive environments.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.