Si EPI Susceptor

VeTek Semiconductor is a factory that combines precision machining and semiconductor SiC and TaC coating capabilities. The barrel type Si Epi Susceptor provides temperature and atmosphere control capabilities, enhancing production efficiency in semiconductor epitaxial growth processes.Looking forward to setting up cooperation relationship with you.

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Product Description

The following is the introduction of high quality Si Epi Susceptor, hoping to help you better understand Barrel Type Si Epi Susceptor. Welcome new and old customers to continue to cooperate with us to create a better future!

An Epitaxial Reactor is a specialized device used for epitaxial growth in semiconductor manufacturing. Barrel Type Si Epi Susceptor provides an environment that controls temperature, atmosphere and other key parameters to deposit new crystal layers on the wafer surface.

The main advantage of the Barrel Type Si Epi Susceptor is its ability to process multiple chips simultaneously, which increases production efficiency. It usually has multiple mounts or clamps for holding multiple wafers so that multiple wafers can be grown at the same time in the same growth cycle. This high throughput feature reduces production cycles and costs and improves production efficiency.

In addition, the Barrel Type Si Epi Susceptor offers optimized temperature and atmosphere control. It is equipped with an advanced temperature control system that is able to precisely control and maintain the desired growth temperature. At the same time, it provides good atmosphere control, ensuring that each chip is grown under the same atmosphere conditions. This helps to achieve uniform epitaxial layer growth and improve the quality and consistency of the epitaxial layer.

In the Barrel Type Si Epi Susceptor, the chip usually achieves uniform temperature distribution and heat transfer through air flow or liquid flow. This uniform temperature distribution helps avoid the formation of hot spots and temperature gradients, thereby improving the uniformity of the epitaxial layer.

Another advantage is that the Barrel Type Si Epi Susceptor provides flexibility and scalability. It can be adjusted and optimized for different epitaxial materials, chip sizes and growth parameters. This enables researchers and engineers to conduct rapid process development and optimization to meet the epitaxial growth needs of different applications and requirements.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1