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    • China High Grade Graphite Roll Manufacturer, Supplier, Factory

    As a professional High Grade Graphite Roll manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable High Grade Graphite Roll made in China, you can leave us a message.

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    • Silicon Carbide Wafer Boat for Horizontal Furnace

      Silicon Carbide Wafer Boat for Horizontal Furnace

      VeTek Semiconductor is a professional manufacturer and supplier in China for silicon carbide wafer boat for horizontal furnace, with years of experience in R&D and production, can control the quality well and offer a competitive price. You can rest assured to buy the silicon carbide wafer boat for horizontal furnace from us.
    • SiC Coating Collector Center

      SiC Coating Collector Center

      VeTek Semiconductor, a reputable CVD SiC coating manufacturer, brings you the cutting-edge SiC Coating Collector Center in Aixtron G5 MOCVD system. These SiC Coating Collector Center are meticulously designed with high purity graphite and boast an advanced CVD SiC coating, ensuring high temperature stability, corrosion resistance, high purity.Looking forward to cooperating with you!
    • 8 Inch Halfmoon Part for LPE Reactor

      8 Inch Halfmoon Part for LPE Reactor

      VeTek Semiconductor is a leading 8 Inch Halfmoon Part for LPE Reactor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a 8 Inch Halfmoon Part for LPE Reactor designed specifically for LPE SiC epitaxy reactor. This halfmoon part a versatile and efficient solution for semiconductor manufacturing with its optimal size, compatibility, and high productivity.We welcome you to visit our factory in China.
    • SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

      SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

      VeTek Semiconductor is a leading SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC-coated pancake susceptor designed specifically for LPE PE3061S 6” wafers. This epitaxial susceptor features high corrosion resistance, good heat conduction performance, good uniformity.We welcome you to visit our factory in China.
    • CVD SiC Coating Nozzle

      CVD SiC Coating Nozzle

      Vetek Semiconductor’s CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications.Looking forward to setting up long term cooperation with you.
    • 4H N-type SiC Substrate

      4H N-type SiC Substrate

      As a professional 4H N-type SiC Substrate manufacturer and supplier in China, Vetek Semiconductor 4H N-type SiC Substrate aims to provide advanced technology and product solutions for the semiconductor industry. Our 4H N-type SiC Wafer is carefully designed and manufactured with high reliability to meet the demanding requirements of the semiconductor industry. We welcome your further inquiries.
    • Related Blog
    • Reviews

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

      Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

    • Material of silicon carbide epitaxy

      The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

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