English
Home > Products> GaN-on-SiC Substrate

China GaN-on-SiC Substrate Manufacturer, Supplier, Factory

As a professional GaN-on-SiC Substrate manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable GaN-on-SiC Substrate made in China, you can leave us a message.

Related Products

Hot Products

  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    VeTek Semiconductor is a leading manufacturer and supplier of SiC Coated Graphite Susceptor for MOCVD in China, specializing in SiC coating applications and epitaxial semiconductor products for the semiconductor industry. Our MOCVD SiC coated graphite susceptors offer competitive quality and pricing, serving markets across Europe and America. We are committed to becoming your long-term, trusted partner in advancing semiconductor manufacturing.
  • TaC Coating Rotation Plate

    TaC Coating Rotation Plate

    VeTek Semiconductor's TaC Coating Rotation Plate boasts an outstanding TaC coating,With its exceptional TaC coating, TaC Coating Rotation Plate boasts have remarkable high-temperature resistance and chemical inertness,that set it apart from traditional solutions.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
  • SiC Shower Head

    SiC Shower Head

    VeTek Semiconductor is a leading SiC Shower Head manufacturer and innovator in China.We have been specialized in SiC material for many years.SiC Shower Head is chosen as a focusing ring material due to its excellent thermochemical stability, high mechanical strength and resistance to plasma erosion.We look forward to becoming your long-term partner in China.
  • Thermal spraying technology MLCC capacitor

    Thermal spraying technology MLCC capacitor

    Vetek Semiconductor thermal spraying technology plays an extremely important role in the coating application of sintered crucibles for high-end multilayer ceramic capacitor (MLCC) materials. With the continuous miniaturization and high performance of electronic devices, the demand for thermal spraying technology MLCC capacitors is also growing rapidly, especially in high-end applications. In order to meet this demand, the crucibles used in the sintering process must have excellent high temperature resistance, corrosion resistance and good thermal conductivity, all of which can be achieved and improved by thermal spraying technology. Looking forward to setting up long term business with you.
  • Silicon Carbide (SiC) Cantilever Paddle

    Silicon Carbide (SiC) Cantilever Paddle

    The role of Silicon Carbide (SiC) Cantilever Paddle in the semiconductor industry is to support and transport wafers. In high-temperature processes such as diffusion and oxidation, SiC cantilever paddle can stably carry wafer boats and wafers without deformation or damage due to high temperature, ensuring the smooth progress of the process. Making diffusion, oxidation and other processes more uniform is crucial to improving the consistency and yield of wafer processing. VeTek Semiconductor uses advanced technology to build SiC cantilever paddle with high-purity silicon carbide to ensure that wafers will not be contaminated. VeTek Semiconductor looks forward to long-term cooperation with you on Silicon Carbide (SiC) Cantilever Paddle products.
  • SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    VeTek Semiconductor is a leading SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC-coated pancake susceptor designed specifically for LPE PE3061S 6” wafers. This epitaxial susceptor features high corrosion resistance, good heat conduction performance, good uniformity.We welcome you to visit our factory in China.
  • Related Blog
  • Reviews

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • The four most powerful graphite manufacturers in the world - Vetek

    The four most powerful graphite manufacturers in the world: SGL, Toyo Tanso, Tokai Carbon, Mersen and their corresponding typical graphite and application areas.

  • How much do you know about CVD SiC ? - VeTek Semiconductor

    CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

  • Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

    Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

  • What are the differences between MBE and MOCVD technologies?

    This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept