Silicon-based GaN Epitaxial Susceptor

VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Silicon-based GaN Epitaxial Susceptor. The susceptor semiconductor is used in VEECO K465i GaN MOCVD system, high purity, high temperature resistance, corrosion resistance, welcome to inquire and cooperate with us!

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Product Description

VeTek Semiconducto is a professional leader China Silicon-based GaN Epitaxial Susceptor manufacturer with high quality and reasonable price. Welcome to contact us.

VeTek Semiconductor Silicon-based GaN Epitaxial Susceptor is The Silicon-based GaN Epitaxial susceptor is a key component in the VEECO K465i GaN MOCVD system to support and heat the Silicon substrate of the GaN material during epitaxial growth.

VeTek Semiconductor Silicon-based GaN Epitaxial Susceptor adopts high purity and high quality graphite material as the substrate, which has good stability and heat conduction in the epitaxial growth process. This substrate is able to withstand high temperature environments, ensuring the stability and reliability of the epitaxial growth process.

In order to improve the efficiency and quality of epitaxial growth, the surface coating of this susceptor for uses high-purity and high-uniformity silicon carbide. Silicon carbide coating has excellent high temperature resistance and chemical stability, and can effectively resist the chemical reaction and corrosion in the epitaxial growth process.

The design and material selection of this wafer susceptor are designed to provide optimal thermal conductivity, chemical stability and mechanical strength to support high quality GaN epitaxy growth. Its high purity and high uniformity ensure consistency and uniformity during growth, resulting in a high-quality GaN film.

In general, silicon-based GaN Epitaxial susceptor is a high-performance product designed specifically for the VEECO K465i GaN MOCVD system by using a high purity, high quality graphte substrate and a high purity, high uniformity silicon carbide coating. It provides stability, reliability and high quality support for the epitaxial growth process.

Physical properties of isostatic graphite
Property	Unit	Typical Value
Bulk Density	g/cm³	1.83
Hardness	HSD	58
Electrical Resistivity	μΩ.m	10
Flexural Strength	MPa	47
Compressive Strength	MPa	103
Tensile Strength	MPa	31
Young' s Modulus	GPa	11.8
Thermal Expansion(CTE)	10-6K-1	4.6
Thermal Conductivity	W·m-1·K-1	130
Average Grain Size	μm	8-10
Porosity	%	10
Ash Content	ppm	≤10 (after purified)

Silicon-based GaN Epitaxial Susceptor Physical Properties:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1