China Zirconia Ceramic Nozzle Manufacturer, Supplier, Factory

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

Tantalum carbide (TaC) coating can significantly extend the life of graphite parts by improving high temperature resistance, corrosion resistance, mechanical properties and thermal management capabilities. Its high purity characteristics reduce impurity contamination, improve crystal growth quality, and enhance energy efficiency. It is suitable for semiconductor manufacturing and crystal growth applications in high-temperature, highly corrosive environments.

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.