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    • China vacuum sealing Part Manufacturer, Supplier, Factory

    As a professional vacuum sealing Part manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable vacuum sealing Part made in China, you can leave us a message.

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    • SiC Coated Graphite Crucible Deflector

      SiC Coated Graphite Crucible Deflector

      VeTek Semiconductor have many years of experience in production of high quality SiC coated graphite crucible deflector. We have own laboratory for material research and development, can support your custom designs with superior quality. we welcome you to visit our factory for more discussion.
    • Tantalum Carbide Coated Cover

      Tantalum Carbide Coated Cover

      VeTek Semiconductor is a leading Tantalum Carbide Coated Cover manufacturer and innovator in China.We have been specialized in TaC and SiC coating for many years.Our products have a corrosion resistance, high strength. We look forward to becoming your long-term partner in China.
    • Rapid Thermal Annealing Susceptor

      Rapid Thermal Annealing Susceptor

      VeTek Semiconductor is a leading Rapid Thermal Annealing Susceptor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer Rapid Thermal Annealing Susceptor with high quality,high temperature resistance,super thin.We welcome you to visit our factory in China.
    • Tantalum Carbide Coated Chuck

      Tantalum Carbide Coated Chuck

      VeTek Semiconductor is a leading Tantalum Carbide Coated Chuck manufacturer and innovator in China.We have been specialized in TaC coating for many years.Our products have a high purity and high temperature resistance up to 2000℃.We look forward to becoming your long-term partner in China.
    • 4°off axis p-type SiC Wafer

      4°off axis p-type SiC Wafer

      VeTek Semiconductor is a professional Chinese manufacturer of 4°off axis p-type SiC Wafer, 4H N type SiC Substrate, and 4H Semi Insulating type SiC Substrate. Among them, 4°off axis p-type SiC Wafer is a special semiconductor material used in high-performance electronic devices. VeTek Semiconductor is committed to providing advanced solutions for various SiC Wafer products for the semiconductor industry. We sincerely look forward to your further consultation.
    • TaC Coating Tube

      TaC Coating Tube

      As a professional TaC Coating Tube manufacturer and supplier in China, VeTek Semiconductor's TaC coating tube is a key component for the successful growth of silicon carbide single crystals. With its high temperature resistance, chemical inertness and excellent performance, it ensures the production of high-quality crystals with consistent results. Trust our innovative solutions to enhance your PVT method SiC crystal growth process and achieve excellent results.Welcome to inquiry us.
    • Related Blog
    • Reviews

    • What is Tantalum Carbide Coating?

      This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD process, and introduces VeTek Semiconductor's most popular TaC coating.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • Principles and Technology of Physical Vapor Deposition (PVD) Coating (2/2) - VeTek Semiconductor

      Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.

    • Chip manufacturing: A process flow of MOSFET

      The chip manufacturing process includes photolithography,etching, diffusion, thin film, ion implantation, chemical mechanical polishing, cleaning, etc. This article roughly explains how these processes are integrated in sequence to manufacture a MOSFET.

    • The Development History of 3C SiC

      Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

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