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  • TaC Coated Wafer Carriers

    • China TaC Coated Wafer Carriers Manufacturer, Supplier, Factory

    As a professional TaC Coated Wafer Carriers manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable TaC Coated Wafer Carriers made in China, you can leave us a message.

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    • SiC Coated Epi Susceptor

      SiC Coated Epi Susceptor

      As the top domestic manufacturer of silicon carbide and tantalum carbide coatings, VeTek Semiconductor is able to provide precision machining and uniform coating of SiC Coated Epi Susceptor, effectively controlling the purity of coating and product below 5ppm. The product life is comparable to that of SGL. Welcome to inquire us.
    • Silicon Carbide Epitaxy Wafer Carrier

      Silicon Carbide Epitaxy Wafer Carrier

      VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.
    • SiC Coated Support for LPE PE2061S

      SiC Coated Support for LPE PE2061S

      VeTek Semiconductor is a leading SiC Coated Support for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Support for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Support for LPE PE2061S is the bottom of barrel susceptor.It can withstand 1600 degrees Celsius high temperature, extend product life of graphite spare part.Welcome to send us inquiry.
    • MOCVD Susceptor

      MOCVD Susceptor

      Vetek Semiconductor focuses on the research and development and industrialization of CVD SiC coating and CVD TaC coating. Taking MOCVD Susceptor as an example, the product is highly processed with high precision, dense CVD SIC coating, high temperature resistance and strong corrosion resistance. An inquiry into us is welcome.
    • Solid SiC Etching Focusing Ring

      Solid SiC Etching Focusing Ring

      VeTek Semiconductor is a leading Solid SiC Etching Focusing Ring manufacturer and innovator in China.We have been specialized in SiC material for many years.Solid SiC is chosen as a focusing ring material due to its excellent thermochemical stability, high mechanical strength and resistance to plasma erosion.We look forward to becoming your long-term partner in China.
    • Wafer Handling Robotic Arm

      Wafer Handling Robotic Arm

      Vetek Semiconductor thermal spraying technology plays a vital role in the application of wafer handling robotic arms, especially in semiconductor manufacturing environments that require high precision and high cleanliness. This technology significantly improves the durability, reliability and work efficiency of the equipment by coating special materials on the surface of the wafer handling robotic arm. Welcome to inquiry us.
    • Related Blog
    • Reviews

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

    • Diamond - the future star of semiconductors

      Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

    • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

      Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • ALD Atomic Layer Deposition Recipe

      Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

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