SiC Coating graphite MOCVD heater

MOCVD is a precision thin film growth technology that is widely used in semiconductor, optoelectronic and microelectronic device manufacturing. Through MOCVD technology, high-quality semiconductor material films can be deposited on substrates (such as silicon, sapphire, silicon carbide, etc.).

In MOCVD equipment, the SiC Coating graphite MOCVD heater provides a uniform and stable heating environment in the high-temperature reaction chamber, allowing the gas phase chemical reaction to proceed, thereby depositing the desired thin film on the substrate surface.

VeTek Semiconductor's SiC Coating graphite MOCVD heater is made of high quality graphite material with SiC coating.The SiC Coated graphite MOCVD heater generates heat through the principle of resistance heating.

The core of the SiC Coating graphite MOCVD heater is the graphite substrate. The current is applied through an external power supply, and the resistance characteristics of graphite are used to generate heat to achieve the required high temperature. The thermal conductivity of the graphite substrate is excellent, which can quickly conduct heat and evenly transfer the temperature to the entire heater surface. At the same time, the SiC coating does not affect the thermal conductivity of graphite, allowing the heater to respond quickly to temperature changes and ensure uniform temperature distribution.

Pure graphite is prone to oxidation under high temperature conditions. The SiC coating effectively isolates the graphite from direct contact with oxygen, thereby preventing oxidation reactions and extending the life of the heater. In addition, MOCVD equipment uses corrosive gases (such as ammonia, hydrogen, etc.) for chemical vapor deposition. The chemical stability of the SiC coating enables it to effectively resist the erosion of these corrosive gases and protect the graphite substrate.

Under high temperatures, uncoated graphite materials may release carbon particles, which will affect the deposition quality of the film. The application of SiC coating inhibits the release of carbon particles, allowing the MOCVD process to be carried out in a clean environment, meeting the needs of semiconductor manufacturing with high cleanliness requirements.

Finally, SiC Coating graphite MOCVD heater is usually designed in a circular or other regular shape to ensure uniform temperature on the substrate surface. Temperature uniformity is critical for the uniform growth of thick films, especially in the MOCVD epitaxial growth process of III-V compounds such as GaN and InP.

VeTeK Semiconductor provides professional customization services. The industry-leading machining and SiC coating capabilities enable us to manufacture top-level heaters for MOCVD equipment, suitable for most MOCVD equipment.

Basic physical properties of CVD SiC coating

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